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ReaxFF Reactive Force Field for Exploring Electronically Switchable Polarization in Zn
1-x
Mg
x
O Ferroelectric Semiconductors
Alireza Sepehrinezhad
, Steven M. Baksa
, Ismaila Dabo
,
Adri C.T. van Duin
Materials Science and Engineering
Mechanical Engineering
Institute of Energy and the Environment (IEE)
Materials Computation Center
Research output
:
Contribution to journal
›
Article
›
peer-review
4
Scopus citations
Overview
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Dive into the research topics of 'ReaxFF Reactive Force Field for Exploring Electronically Switchable Polarization in Zn
1-x
Mg
x
O Ferroelectric Semiconductors'. Together they form a unique fingerprint.
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Keyphrases
Cluster Distribution
25%
Coercive Field
100%
Density Functional Calculations
25%
Driving Electronics
25%
Electronic Components
25%
Ferroelectric Crystal
25%
Ferroelectric Materials
25%
Ferroelectric Properties
25%
Ferroelectric Semiconductors
100%
Ferroelectric Switching
25%
Functional Devices
25%
High-density Integration
25%
Hysteresis Behavior
50%
Materials Platforms
25%
Mg Atom
50%
Mg Substitution
50%
Miniaturization
25%
Misfit
25%
Randomly Distributed
25%
ReaxFF Reactive Force Field
100%
Reconfigurable Polarization
100%
Temperature Effect
25%
Temperature Rise
25%
Tunable Properties
25%
Uniform Distribution
25%
Valuable Insight
25%
Von Neumann Architecture
25%
Material Science
Density
50%
Electronic Component
25%
Ferroelectric Material
100%
Ferroelectricity
50%