TY - GEN
T1 - Recent advances in GaN power electronics
AU - Boutros, Karim
AU - Chu, Rongming
AU - Hughes, Brian
PY - 2013/11/7
Y1 - 2013/11/7
N2 - Gallium Nitride power devices are poised to replace silicon-based MOSFETs in power switching applications having weight and volume constraints, while simultaneously needing a high overall efficiency. With its projected 100x performance advantage over silicon, GaN is a game changing technology for energy-efficient power electronics. This paper reviews the advantages of GaN material and devices, the performance of these devices in power circuits, and the potential applications for this technology.
AB - Gallium Nitride power devices are poised to replace silicon-based MOSFETs in power switching applications having weight and volume constraints, while simultaneously needing a high overall efficiency. With its projected 100x performance advantage over silicon, GaN is a game changing technology for energy-efficient power electronics. This paper reviews the advantages of GaN material and devices, the performance of these devices in power circuits, and the potential applications for this technology.
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U2 - 10.1109/CICC.2013.6658400
DO - 10.1109/CICC.2013.6658400
M3 - Conference contribution
AN - SCOPUS:84892647453
SN - 9781467361460
T3 - Proceedings of the Custom Integrated Circuits Conference
BT - Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, CICC 2013
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 35th Annual Custom Integrated Circuits Conference - The Showcase for Circuit Design in the Heart of Silicon Valley, CICC 2013
Y2 - 22 September 2013 through 25 September 2013
ER -