@inproceedings{b1d62f77c9c84c1e991cb3faa7059146,
title = "Recent advances in GaN power electronics",
abstract = "Gallium Nitride power devices are poised to replace silicon-based MOSFETs in power switching applications having weight and volume constraints, while simultaneously needing a high overall efficiency. With its projected 100x performance advantage over silicon, GaN is a game changing technology for energy-efficient power electronics. This paper reviews the advantages of GaN material and devices, the performance of these devices in power circuits, and the potential applications for this technology.",
author = "Karim Boutros and Rongming Chu and Brian Hughes",
year = "2013",
month = nov,
day = "7",
doi = "10.1109/CICC.2013.6658400",
language = "English (US)",
isbn = "9781467361460",
series = "Proceedings of the Custom Integrated Circuits Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, CICC 2013",
address = "United States",
note = "35th Annual Custom Integrated Circuits Conference - The Showcase for Circuit Design in the Heart of Silicon Valley, CICC 2013 ; Conference date: 22-09-2013 Through 25-09-2013",
}