TY - JOUR
T1 - Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 W/mm at 10 GHz
AU - Pei, Yi
AU - Chu, Rongming
AU - Fichtenbaum, Nicholas A.
AU - Chen, Zhen
AU - Brown, David
AU - Shen, Likun
AU - Keller, Stacia
AU - DenBaars, Steven P.
AU - Mishra, Umesh K.
PY - 2007/12/14
Y1 - 2007/12/14
N2 - A recessed slant gate processing has been used in AlGaN/GaN high electron mobility transistors (HEMTs) to mitigate the electric field, minimize the dispersion and increase the breakdown voltage. More than one order of magnitude of decrease in gate leakage has been observed by recessing the slant gate. For a 0.65 μm gate-length device, an extrinsic fT of 18 GHz and extrinsic fMAX of 52 GHz at a drain bias of 25 V were achieved. At 10 GHz, a state-of-the-art power density of 20.9 W/mm, with a power-added efficiency (PAE) of 40% at a drain bias of 83 V, was demonstrated.
AB - A recessed slant gate processing has been used in AlGaN/GaN high electron mobility transistors (HEMTs) to mitigate the electric field, minimize the dispersion and increase the breakdown voltage. More than one order of magnitude of decrease in gate leakage has been observed by recessing the slant gate. For a 0.65 μm gate-length device, an extrinsic fT of 18 GHz and extrinsic fMAX of 52 GHz at a drain bias of 25 V were achieved. At 10 GHz, a state-of-the-art power density of 20.9 W/mm, with a power-added efficiency (PAE) of 40% at a drain bias of 83 V, was demonstrated.
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U2 - 10.1143/JJAP.46.L1087
DO - 10.1143/JJAP.46.L1087
M3 - Article
AN - SCOPUS:41749096824
SN - 0021-4922
VL - 46
SP - L1087-L1089
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 45-49
ER -