Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 W/mm at 10 GHz

Keyphrases

• Drain Bias 100%
• AlGaN/GaN High Electron Mobility Transistor 100%
• Electric Field (E-field) 50%
• Order of Magnitude 50%
• Power Density 50%
• Breakdown Voltage 50%
• Gate Length 50%
• Gate Leakage 50%
• Gate Processing 50%
• Power Added Efficiency 50%

Engineering

• Drain Bias 100%
• Transistor 100%
• Power Density 50%
• Breakdown Voltage 50%
• Gate Length 50%
• Electric Field 50%
• Power Added Efficiency 50%

Material Science

• Transistor 100%
• Electron Mobility 100%
• Density 50%