Abstract
In this paper, we propose a novel reconfigurable ferroelectric FET (R-FEFET), which can reconfigure its operation between volatile and nonvolatile modes during run-time by dynamically modulating its hysteresis. The R-FEFET comprises of two gates with ferroelectric (FE) in both the gate stacks. One of these terminals serves as a regular gate, while the other is used as a control to introduce reconfigurability. Employing Landau-Khalatnikov equation-based FEFET model, we extensively analyze the device characteristics in both FinFET and planar technologies. We show that by changing the control voltage between 0 and 1 V, the hysteresis width (HW) can be modulated between 1.1 and 0.3 V. In addition, we show the device characteristics and advantages that R-FEFETs possess to overcome the drawbacks encountered with gate leakage in standard FEFETs. The hold margins in the nonvolatile mode of R-FEFETs increase by ∼10× with respect to standard FEFETs, and the drive current strengths in the volatile mode show 13% improvements when compared to standard FETs. Using the proposed R-FEFETs, we examine a low-power nonvolatile memory design in Part II of this paper.
| Original language | English (US) |
|---|---|
| Article number | 8667056 |
| Pages (from-to) | 2771-2779 |
| Number of pages | 9 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 66 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jun 2019 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering