Reconfigurable near-IR metasurface based on Ge2Sb2Te5 phase-change material

  • Alexej V. Pogrebnyakov
  • , Jeremy A. Bossard
  • , Jeremiah P. Turpin
  • , J. David Musgraves
  • , Hee Jung Shin
  • , Clara Riverobaleine
  • , Nikolas Podraza
  • , Kathleen A. Richardson
  • , Douglas H. Werner
  • , Theresa S. Mayer

Research output: Contribution to journalArticlepeer-review

83 Scopus citations

Abstract

A reconfigurable metasurface made of Ge2Sb2Te5 phase-change material was experimentally demonstrated in the 1.55 μm wavelength range. A nanostructured Ge2Sb2Te5 film on fused silica substrate was optimized to switch from highly transmissive (80%) to highly absorptive (76%) modes with a 7:1 contrast ratio in transmission independent of polarization, when thermally transformed from the amorphous to crystalline state. The metasurface was designed using a genetic algorithm optimizer linked with an efficient fullwave electromagnetic solver.

Original languageEnglish (US)
Pages (from-to)2264-2275
Number of pages12
JournalOptical Materials Express
Volume8
Issue number8
DOIs
StatePublished - Aug 1 2018

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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