Reconfigurable near-IR metasurface based on Ge2Sb2Te5 phase-change material

Alexej V. Pogrebnyakov; Jeremy A. Bossard; Jeremiah P. Turpin; J. David Musgraves; Hee Jung Shin; Clara Riverobaleine; Nikolas Podraza; Kathleen A. Richardson; Douglas H. Werner; Theresa S. Mayer

doi:10.1364/OME.8.002264

Reconfigurable near-IR metasurface based on Ge₂Sb₂Te₅ phase-change material

Alexej V. Pogrebnyakov, Jeremy A. Bossard, Jeremiah P. Turpin, J. David Musgraves, Hee Jung Shin, Clara Riverobaleine, Nikolas Podraza, Kathleen A. Richardson, Douglas H. Werner, Theresa S. Mayer

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

81 Scopus citations

Abstract

A reconfigurable metasurface made of Ge₂Sb₂Te₅ phase-change material was experimentally demonstrated in the 1.55 μm wavelength range. A nanostructured Ge₂Sb₂Te₅ film on fused silica substrate was optimized to switch from highly transmissive (80%) to highly absorptive (76%) modes with a 7:1 contrast ratio in transmission independent of polarization, when thermally transformed from the amorphous to crystalline state. The metasurface was designed using a genetic algorithm optimizer linked with an efficient fullwave electromagnetic solver.

Original language	English (US)
Pages (from-to)	2264-2275
Number of pages	12
Journal	Optical Materials Express
Volume	8
Issue number	8
DOIs	https://doi.org/10.1364/OME.8.002264
State	Published - Aug 1 2018

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1364/OME.8.002264

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title = "Reconfigurable near-IR metasurface based on Ge2Sb2Te5 phase-change material",

abstract = "A reconfigurable metasurface made of Ge2Sb2Te5 phase-change material was experimentally demonstrated in the 1.55 μm wavelength range. A nanostructured Ge2Sb2Te5 film on fused silica substrate was optimized to switch from highly transmissive (80\%) to highly absorptive (76\%) modes with a 7:1 contrast ratio in transmission independent of polarization, when thermally transformed from the amorphous to crystalline state. The metasurface was designed using a genetic algorithm optimizer linked with an efficient fullwave electromagnetic solver.",

author = "Pogrebnyakov, \{Alexej V.\} and Bossard, \{Jeremy A.\} and Turpin, \{Jeremiah P.\} and Musgraves, \{J. David\} and Shin, \{Hee Jung\} and Clara Riverobaleine and Nikolas Podraza and Richardson, \{Kathleen A.\} and Werner, \{Douglas H.\} and Mayer, \{Theresa S.\}",

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doi = "10.1364/OME.8.002264",

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T1 - Reconfigurable near-IR metasurface based on Ge2Sb2Te5 phase-change material

AU - Pogrebnyakov, Alexej V.

AU - Bossard, Jeremy A.

AU - Turpin, Jeremiah P.

AU - Musgraves, J. David

AU - Shin, Hee Jung

AU - Riverobaleine, Clara

AU - Podraza, Nikolas

AU - Richardson, Kathleen A.

AU - Werner, Douglas H.

AU - Mayer, Theresa S.

PY - 2018/8/1

Y1 - 2018/8/1

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AB - A reconfigurable metasurface made of Ge2Sb2Te5 phase-change material was experimentally demonstrated in the 1.55 μm wavelength range. A nanostructured Ge2Sb2Te5 film on fused silica substrate was optimized to switch from highly transmissive (80%) to highly absorptive (76%) modes with a 7:1 contrast ratio in transmission independent of polarization, when thermally transformed from the amorphous to crystalline state. The metasurface was designed using a genetic algorithm optimizer linked with an efficient fullwave electromagnetic solver.

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Reconfigurable near-IR metasurface based on Ge₂Sb₂Te₅ phase-change material

Abstract

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