TY - JOUR
T1 - Reconfigurable Positioning of Vertically-Oriented Nanowires Around Topographical Features in an AC Electric Field
AU - Boehm, Sarah J.
AU - Lin, Lan
AU - Brljak, Nermina
AU - Famularo, Nicole R.
AU - Mayer, Theresa S.
AU - Keating, Christine D.
N1 - Funding Information:
*E-mail: [email protected]. ORCID Christine D. Keating: 0000-0001-6039-1961 Present Address ∥Intel Corporation, 2501 NW 229th Avenue, Hillsboro, OR, 97124, United States Author Contributions The manuscript was written through contributions of all authors. All authors have given approval to the final version of the manuscript. Funding This research was supported by the Penn State Materials Research Science and Engineering Center (MRSEC, NSF DMR-1420620). TEM images were acquired at the Penn State Microscopy and Cytometry Facility and electrodes were fabricated at the Pennsylvania State University NSF NNIN Site. Undergraduate N.B. was funded by NSF NNIN REU (ECCS-0335765). N.R.F was supported by the National Science Foundation Graduate Research Fellowship Program under Grant No. (DGE1255832). Notes The authors declare no competing financial interest.
PY - 2017/10/17
Y1 - 2017/10/17
N2 - We report the effect of topographical features on gold nanowire assemblies in a vertically applied AC electric field. Nanowires 300 nm in diameter ×2.5 μm long, and coated with ∼30 nm silica shell, were assembled in aqueous solution between top and bottom electrodes, where the bottom electrode was patterned with cylindrical dielectric posts. Assemblies were monitored in real time using optical microscopy. Dielectrophoretic and electrohydrodynamic forces were manipulated through frequency and voltage variation, organizing nanowires parallel to the field lines, i.e., standing perpendicular to the substrate surface. Field gradients around the posts were simulated and assembly behavior was experimentally evaluated as a function of patterned feature diameter and spacing. The electric field gradient was highest around these topographic features, which resulted in accumulation of vertically oriented nanowires around the post perimeters when dielectrophoresis dominated (high AC frequency) or between the posts when electrohydrodynamics dominated (low AC frequency). This general type of reconfigurable assembly, coupled with judicious choice of nanowire and post materials/dimensions, could ultimately enable new types of optical materials capable of switching between two functional states by changing the applied field conditions.
AB - We report the effect of topographical features on gold nanowire assemblies in a vertically applied AC electric field. Nanowires 300 nm in diameter ×2.5 μm long, and coated with ∼30 nm silica shell, were assembled in aqueous solution between top and bottom electrodes, where the bottom electrode was patterned with cylindrical dielectric posts. Assemblies were monitored in real time using optical microscopy. Dielectrophoretic and electrohydrodynamic forces were manipulated through frequency and voltage variation, organizing nanowires parallel to the field lines, i.e., standing perpendicular to the substrate surface. Field gradients around the posts were simulated and assembly behavior was experimentally evaluated as a function of patterned feature diameter and spacing. The electric field gradient was highest around these topographic features, which resulted in accumulation of vertically oriented nanowires around the post perimeters when dielectrophoresis dominated (high AC frequency) or between the posts when electrohydrodynamics dominated (low AC frequency). This general type of reconfigurable assembly, coupled with judicious choice of nanowire and post materials/dimensions, could ultimately enable new types of optical materials capable of switching between two functional states by changing the applied field conditions.
UR - https://www.scopus.com/pages/publications/85031676971
UR - https://www.scopus.com/pages/publications/85031676971#tab=citedBy
U2 - 10.1021/acs.langmuir.7b02163
DO - 10.1021/acs.langmuir.7b02163
M3 - Article
C2 - 28915051
AN - SCOPUS:85031676971
SN - 0743-7463
VL - 33
SP - 10898
EP - 10906
JO - Langmuir
JF - Langmuir
IS - 41
ER -