Reflectance and minority carrier lifetime of silicon nanoholes synthesized by chemical etching method

Daisheng Zhang; Rui Jia; Chen Chen; Wuchang Ding; Zhi Jin; Xinyu Liu; Tianchun Ye

doi:10.1016/j.cplett.2014.03.092

Reflectance and minority carrier lifetime of silicon nanoholes synthesized by chemical etching method

Daisheng Zhang, Rui Jia, Chen Chen, Wuchang Ding, Zhi Jin, Xinyu Liu, Tianchun Ye

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Silicon nanoholes (Si NHs) were synthesized by a simple metal-assisted chemical etching method. With different pre-etching time of Ag particles, Si NHs with different morphology and Si nanowires (NWs) were prepared. After tetramethyl ammonium hydroxide (TMAH) etching, the NH sample with pre-etching Ag particles for 20 min show average reflectance below 5% which is comparable to the reflectance of the NW sample. The minority carrier lifetime of this NH sample is 58.2 μs due to their low surface recombination, while the lifetime of the NWs is 38.0 μs under the same iodine-ethanol passivation.

Original language	English (US)
Pages (from-to)	69-73
Number of pages	5
Journal	Chemical Physics Letters
Volume	601
DOIs	https://doi.org/10.1016/j.cplett.2014.03.092
State	Published - May 9 2014

All Science Journal Classification (ASJC) codes

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1016/j.cplett.2014.03.092

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@article{47f3bee505304202b86dff0589c136de,

title = "Reflectance and minority carrier lifetime of silicon nanoholes synthesized by chemical etching method",

abstract = "Silicon nanoholes (Si NHs) were synthesized by a simple metal-assisted chemical etching method. With different pre-etching time of Ag particles, Si NHs with different morphology and Si nanowires (NWs) were prepared. After tetramethyl ammonium hydroxide (TMAH) etching, the NH sample with pre-etching Ag particles for 20 min show average reflectance below 5% which is comparable to the reflectance of the NW sample. The minority carrier lifetime of this NH sample is 58.2 μs due to their low surface recombination, while the lifetime of the NWs is 38.0 μs under the same iodine-ethanol passivation.",

author = "Daisheng Zhang and Rui Jia and Chen Chen and Wuchang Ding and Zhi Jin and Xinyu Liu and Tianchun Ye",

note = "Funding Information: This work was supported by Ministry of Science and Technology of China ( 2009CB939703 and 2012AA050304 ), National Natural Science Foundation of China ( 51172268 , 11104319 , 11274346 , 51202285 and 61234005 ), Government of Beijing City ( Y2BK024001 ), and Chinese Academy of Science ( Y1YT064001 , Y1YF034001 and Y2YF014001 ). ",

year = "2014",

month = may,

day = "9",

doi = "10.1016/j.cplett.2014.03.092",

language = "English (US)",

volume = "601",

pages = "69--73",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Reflectance and minority carrier lifetime of silicon nanoholes synthesized by chemical etching method

AU - Zhang, Daisheng

AU - Jia, Rui

AU - Chen, Chen

AU - Ding, Wuchang

AU - Jin, Zhi

AU - Liu, Xinyu

AU - Ye, Tianchun

N1 - Funding Information: This work was supported by Ministry of Science and Technology of China ( 2009CB939703 and 2012AA050304 ), National Natural Science Foundation of China ( 51172268 , 11104319 , 11274346 , 51202285 and 61234005 ), Government of Beijing City ( Y2BK024001 ), and Chinese Academy of Science ( Y1YT064001 , Y1YF034001 and Y2YF014001 ).

PY - 2014/5/9

Y1 - 2014/5/9

N2 - Silicon nanoholes (Si NHs) were synthesized by a simple metal-assisted chemical etching method. With different pre-etching time of Ag particles, Si NHs with different morphology and Si nanowires (NWs) were prepared. After tetramethyl ammonium hydroxide (TMAH) etching, the NH sample with pre-etching Ag particles for 20 min show average reflectance below 5% which is comparable to the reflectance of the NW sample. The minority carrier lifetime of this NH sample is 58.2 μs due to their low surface recombination, while the lifetime of the NWs is 38.0 μs under the same iodine-ethanol passivation.

AB - Silicon nanoholes (Si NHs) were synthesized by a simple metal-assisted chemical etching method. With different pre-etching time of Ag particles, Si NHs with different morphology and Si nanowires (NWs) were prepared. After tetramethyl ammonium hydroxide (TMAH) etching, the NH sample with pre-etching Ag particles for 20 min show average reflectance below 5% which is comparable to the reflectance of the NW sample. The minority carrier lifetime of this NH sample is 58.2 μs due to their low surface recombination, while the lifetime of the NWs is 38.0 μs under the same iodine-ethanol passivation.

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U2 - 10.1016/j.cplett.2014.03.092

DO - 10.1016/j.cplett.2014.03.092

M3 - Article

AN - SCOPUS:84899507964

SN - 0009-2614

VL - 601

SP - 69

EP - 73

JO - Chemical Physics Letters

JF - Chemical Physics Letters

ER -

Reflectance and minority carrier lifetime of silicon nanoholes synthesized by chemical etching method

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