Reflectance and photoluminescence characterization of BexZn 1-xTe epilayers

O. Maksimov; Martin Muñoz; Nitin Samarth; M. C. Tamargo

doi:10.1016/j.tsf.2004.03.003

Reflectance and photoluminescence characterization of Be_xZn _1-xTe epilayers

O. Maksimov, Martin Muñoz, Nitin Samarth, M. C. Tamargo

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Be_xZn_1-xTe thin films were grown on InP substrates by molecular beam epitaxy (MBE). Optical properties of the epilayers were studied using reflectance and photoluminescence (PL) measurements. An increase in the full width at half maximum of the emission line with the increase in BeTe content was observed and explained by the disorder-induced broadening. The temperature dependence of the band gap energy was determined from reflectance spectra and fitted by semiempirical equation taking into account average phonon energy and electron-phonon interaction. A reduction of the temperature variation of the band gap with the increase in BeTe content was observed. We propose that this effect is due to the decrease of the lattice contribution caused by the lattice hardening properties of BeTe.

Original language	English (US)
Pages (from-to)	88-92
Number of pages	5
Journal	Thin Solid Films
Volume	467
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2004.03.003
State	Published - Nov 22 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2004.03.003

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@article{19d09b49fbc84ed08d8f4b0c072ce3b4,

title = "Reflectance and photoluminescence characterization of BexZn 1-xTe epilayers",

abstract = "BexZn1-xTe thin films were grown on InP substrates by molecular beam epitaxy (MBE). Optical properties of the epilayers were studied using reflectance and photoluminescence (PL) measurements. An increase in the full width at half maximum of the emission line with the increase in BeTe content was observed and explained by the disorder-induced broadening. The temperature dependence of the band gap energy was determined from reflectance spectra and fitted by semiempirical equation taking into account average phonon energy and electron-phonon interaction. A reduction of the temperature variation of the band gap with the increase in BeTe content was observed. We propose that this effect is due to the decrease of the lattice contribution caused by the lattice hardening properties of BeTe.",

author = "O. Maksimov and Martin Mu{\~n}oz and Nitin Samarth and Tamargo, {M. C.}",

year = "2004",

month = nov,

day = "22",

doi = "10.1016/j.tsf.2004.03.003",

language = "English (US)",

volume = "467",

pages = "88--92",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Reflectance and photoluminescence characterization of BexZn 1-xTe epilayers

AU - Maksimov, O.

AU - Muñoz, Martin

AU - Samarth, Nitin

AU - Tamargo, M. C.

PY - 2004/11/22

Y1 - 2004/11/22

N2 - BexZn1-xTe thin films were grown on InP substrates by molecular beam epitaxy (MBE). Optical properties of the epilayers were studied using reflectance and photoluminescence (PL) measurements. An increase in the full width at half maximum of the emission line with the increase in BeTe content was observed and explained by the disorder-induced broadening. The temperature dependence of the band gap energy was determined from reflectance spectra and fitted by semiempirical equation taking into account average phonon energy and electron-phonon interaction. A reduction of the temperature variation of the band gap with the increase in BeTe content was observed. We propose that this effect is due to the decrease of the lattice contribution caused by the lattice hardening properties of BeTe.

AB - BexZn1-xTe thin films were grown on InP substrates by molecular beam epitaxy (MBE). Optical properties of the epilayers were studied using reflectance and photoluminescence (PL) measurements. An increase in the full width at half maximum of the emission line with the increase in BeTe content was observed and explained by the disorder-induced broadening. The temperature dependence of the band gap energy was determined from reflectance spectra and fitted by semiempirical equation taking into account average phonon energy and electron-phonon interaction. A reduction of the temperature variation of the band gap with the increase in BeTe content was observed. We propose that this effect is due to the decrease of the lattice contribution caused by the lattice hardening properties of BeTe.

UR - http://www.scopus.com/inward/record.url?scp=4444348681&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4444348681&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2004.03.003

DO - 10.1016/j.tsf.2004.03.003

M3 - Article

AN - SCOPUS:4444348681

SN - 0040-6090

VL - 467

SP - 88

EP - 92

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Reflectance and photoluminescence characterization of Be_xZn _1-xTe epilayers

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