Relationship between strained silicon-oxygen bonds and radiation induced paramagnetic point defects in silicon dioxide

W. L. Warren; Patrick M. Lenahan; C. J. Brinker

doi:10.1016/0038-1098(91)90077-9

Relationship between strained silicon-oxygen bonds and radiation induced paramagnetic point defects in silicon dioxide

W. L. Warren
, Patrick M. Lenahan
, C. J. Brinker

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We have investigated the radiation induced generation of paramagnetic point defects in high surface area sol-gel silicates containing various concentrations of the Raman active 608 cm^-1 D₂ band attributed to strained cyclic trisiloxanes (3-membered rings). Our results suggest a correlation between the concentration of the 3-membered rings with the concentration of radiation induced paramagnetic E' (trivalent silicon center) and oxygen centers, thus, providing the first substantive evidence of the relationship between a specific strained siloxane structure and radiation damage in amorphous silicon dioxide.

Original language	English (US)
Pages (from-to)	137-141
Number of pages	5
Journal	Solid State Communications
Volume	79
Issue number	2
DOIs	https://doi.org/10.1016/0038-1098(91)90077-9
State	Published - Jan 1 1991

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(91)90077-9

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abstract = "We have investigated the radiation induced generation of paramagnetic point defects in high surface area sol-gel silicates containing various concentrations of the Raman active 608 cm-1 D2 band attributed to strained cyclic trisiloxanes (3-membered rings). Our results suggest a correlation between the concentration of the 3-membered rings with the concentration of radiation induced paramagnetic E' (trivalent silicon center) and oxygen centers, thus, providing the first substantive evidence of the relationship between a specific strained siloxane structure and radiation damage in amorphous silicon dioxide.",

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T1 - Relationship between strained silicon-oxygen bonds and radiation induced paramagnetic point defects in silicon dioxide

AU - Warren, W. L.

AU - Lenahan, Patrick M.

AU - Brinker, C. J.

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Y1 - 1991/1/1

N2 - We have investigated the radiation induced generation of paramagnetic point defects in high surface area sol-gel silicates containing various concentrations of the Raman active 608 cm-1 D2 band attributed to strained cyclic trisiloxanes (3-membered rings). Our results suggest a correlation between the concentration of the 3-membered rings with the concentration of radiation induced paramagnetic E' (trivalent silicon center) and oxygen centers, thus, providing the first substantive evidence of the relationship between a specific strained siloxane structure and radiation damage in amorphous silicon dioxide.

AB - We have investigated the radiation induced generation of paramagnetic point defects in high surface area sol-gel silicates containing various concentrations of the Raman active 608 cm-1 D2 band attributed to strained cyclic trisiloxanes (3-membered rings). Our results suggest a correlation between the concentration of the 3-membered rings with the concentration of radiation induced paramagnetic E' (trivalent silicon center) and oxygen centers, thus, providing the first substantive evidence of the relationship between a specific strained siloxane structure and radiation damage in amorphous silicon dioxide.

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UR - https://www.scopus.com/pages/publications/0026190957#tab=citedBy

U2 - 10.1016/0038-1098(91)90077-9

DO - 10.1016/0038-1098(91)90077-9

M3 - Article

AN - SCOPUS:0026190957

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EP - 141

JO - Solid State Communications

JF - Solid State Communications

IS - 2

ER -

Relationship between strained silicon-oxygen bonds and radiation induced paramagnetic point defects in silicon dioxide

Abstract

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