Relationship between the 4H-SiC/SiO2 interface structure and electronic properties explored by electrically detected magnetic resonance

Mark A. Anders; Patrick M. Lenahan; Corey J. Cochrane; Aivars J. Lelis

doi:10.1109/TED.2014.2364722

Relationship between the 4H-SiC/SiO₂ interface structure and electronic properties explored by electrically detected magnetic resonance

Mark A. Anders, Patrick M. Lenahan, Corey J. Cochrane, Aivars J. Lelis

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

In this paper, an exceptionally sensitive form of electron paramagnetic resonance called electrically detected magnetic resonance (EDMR) is utilized to investigate performance limiting imperfections at and very near the interface of 4H-silicon carbide MOSFETs. EDMR measurements are made over an extremely wide range of frequencies, 16 GHz-350 MHz. Multiple interface/near interface defects are identified and strong evidence for significant disorder at the interface region is presented.

Original language	English (US)
Article number	6971198
Pages (from-to)	301-308
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	62
Issue number	2
DOIs	https://doi.org/10.1109/TED.2014.2364722
State	Published - Feb 1 2015

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2014.2364722

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abstract = "In this paper, an exceptionally sensitive form of electron paramagnetic resonance called electrically detected magnetic resonance (EDMR) is utilized to investigate performance limiting imperfections at and very near the interface of 4H-silicon carbide MOSFETs. EDMR measurements are made over an extremely wide range of frequencies, 16 GHz-350 MHz. Multiple interface/near interface defects are identified and strong evidence for significant disorder at the interface region is presented.",

author = "Anders, {Mark A.} and Lenahan, {Patrick M.} and Cochrane, {Corey J.} and Lelis, {Aivars J.}",

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AU - Lenahan, Patrick M.

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AU - Lelis, Aivars J.

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N2 - In this paper, an exceptionally sensitive form of electron paramagnetic resonance called electrically detected magnetic resonance (EDMR) is utilized to investigate performance limiting imperfections at and very near the interface of 4H-silicon carbide MOSFETs. EDMR measurements are made over an extremely wide range of frequencies, 16 GHz-350 MHz. Multiple interface/near interface defects are identified and strong evidence for significant disorder at the interface region is presented.

AB - In this paper, an exceptionally sensitive form of electron paramagnetic resonance called electrically detected magnetic resonance (EDMR) is utilized to investigate performance limiting imperfections at and very near the interface of 4H-silicon carbide MOSFETs. EDMR measurements are made over an extremely wide range of frequencies, 16 GHz-350 MHz. Multiple interface/near interface defects are identified and strong evidence for significant disorder at the interface region is presented.

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Relationship between the 4H-SiC/SiO₂ interface structure and electronic properties explored by electrically detected magnetic resonance

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