TY - GEN
T1 - Reliability and High-Frequency Filter Characteristics of a Low-Loss Material for 5G RF Modules
AU - Kakutani, Takenori
AU - Suzuki, Yuya
AU - Ali, Muhammad
AU - Erdogan, Serhat
AU - Kathaperumal, Mohanalingam
AU - Swaminathan, Madhavan
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/12/15
Y1 - 2020/12/15
N2 - With the tremendous advances and increasing demand in 5G communications, the low-loss performance of RF device components becomes more critical. Two parameters that have significant impact on the low-loss RF performance are lower circuit conductor loss and dielectric loss of the build-up materials. Therefore, this study is focused on the loss tangent (Df) of the dielectric build-up material and demonstration of its electrical reliability with a low-loss substrate for high-frequency transmission. This newly developed advanced low-loss dry film build-up material exhibits a Dfvalues of < 0.003 at 39 GHz and is applicable to high frequency transmission. This build-up material also exhibits excellent electrical reliability required for advanced dielectric materials. For evaluation of the filter characteristics in the mm Wave band, a substrate with filter circuit structures was fabricated using the low loss dielectric material. Transmission characteristics of the filters were measured and demonstrated to have a minimum transmission loss of less than 1.18 dB at 39 GHz.
AB - With the tremendous advances and increasing demand in 5G communications, the low-loss performance of RF device components becomes more critical. Two parameters that have significant impact on the low-loss RF performance are lower circuit conductor loss and dielectric loss of the build-up materials. Therefore, this study is focused on the loss tangent (Df) of the dielectric build-up material and demonstration of its electrical reliability with a low-loss substrate for high-frequency transmission. This newly developed advanced low-loss dry film build-up material exhibits a Dfvalues of < 0.003 at 39 GHz and is applicable to high frequency transmission. This build-up material also exhibits excellent electrical reliability required for advanced dielectric materials. For evaluation of the filter characteristics in the mm Wave band, a substrate with filter circuit structures was fabricated using the low loss dielectric material. Transmission characteristics of the filters were measured and demonstrated to have a minimum transmission loss of less than 1.18 dB at 39 GHz.
UR - http://www.scopus.com/inward/record.url?scp=85103497187&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85103497187&partnerID=8YFLogxK
U2 - 10.1109/ISSM51728.2020.9377527
DO - 10.1109/ISSM51728.2020.9377527
M3 - Conference contribution
AN - SCOPUS:85103497187
T3 - IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
BT - 2020 International Symposium on Semiconductor Manufacturing, ISSM 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 28th International Symposium on Semiconductor Manufacturing, ISSM 2020
Y2 - 15 December 2020 through 16 December 2020
ER -