@inproceedings{2828d29b8afc46819d7d89dee0eba6c3,
title = "Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination",
abstract = "In this work, we utilize electrically detected magnetic resonance via the bipolar amplification effect to explore the physical and chemical nature of defects at the 4H-SiC/SiO2 interface in metal-oxide-semiconductor field effect transistors. Defects at and very near the 4H-SiC/SiO2 interface are involved in bias temperature instabilities in 4H-SiC transistor technology. Of particular relevance to reliability physics, our results indicate that oxygen deficient silicon atoms in the near-interface oxide, known as E' centers, can be greatly reduced utilizing nitric oxide and barium annealing. E' centers have been directly linked to bias temperature instabilities in 4H-SiC technology.",
author = "Ashton, \{James P.\} and Lenahan, \{Patrick M.\} and Lichtenwalner, \{Daniel J.\} and Lelis, \{Aivars J.\} and Anders, \{Mark A.\}",
note = "Funding Information: ACKNOWLEDGMENT This work at Penn State was supported by the U.S. Army Research Laboratory. Any opinions, findings, conclusions, or other recommendations expressed herein are those of the authors and do not necessarily reflect the views of the U.S. Army Research Laboratory. Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE International Reliability Physics Symposium, IRPS 2019 ; Conference date: 31-03-2019 Through 04-04-2019",
year = "2019",
month = may,
day = "22",
doi = "10.1109/IRPS.2019.8720423",
language = "English (US)",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 IEEE International Reliability Physics Symposium, IRPS 2019",
address = "United States",
}