@inproceedings{1ddc612801df4e20a94dc87914f87e55,
title = "Reliability concerns for HfO2/Si (and (ZrO2/Si) systems: Interface and dielectric traps",
abstract = "We report on electron photo-injection results in HfO2 films using capacitance vs. voltage (CV) and electron spin resonance measurements. CV measurements indicate presence of pre-existing large capture cross section electron traps. Electron spin resonance measurements indicate trapped electrons in the form of O-2 superoxide ions. Another center, likely a Hf+3 center, is also observed.",
author = "Kang, {A. Y.} and Lenahan, {P. M.} and Vonley, {J. F.} and Y. Ono",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 IEEE International Integrated Reliability Workshop, IRW 2003 ; Conference date: 20-10-2003 Through 23-10-2003",
year = "2003",
doi = "10.1109/IRWS.2003.1283294",
language = "English (US)",
series = "IEEE International Integrated Reliability Workshop Final Report",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "24--27",
booktitle = "2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003",
address = "United States",
}