Reliability concerns for HfO2/Si (and (ZrO2/Si) systems: Interface and dielectric traps

A. Y. Kang; Patrick M. Lenahan; J. F. Vonley; Y. Ono

doi:10.1109/IRWS.2003.1283294

Reliability concerns for HfO₂/Si (and (ZrO₂/Si) systems: Interface and dielectric traps

A. Y. Kang, Patrick M. Lenahan, J. F. Vonley, Y. Ono

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

We report on electron photo-injection results in HfO₂ films using capacitance vs. voltage (CV) and electron spin resonance measurements. CV measurements indicate presence of pre-existing large capture cross section electron traps. Electron spin resonance measurements indicate trapped electrons in the form of O_-2 superoxide ions. Another center, likely a Hf⁺³ center, is also observed.

Original language	English (US)
Title of host publication	2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	24-27
Number of pages	4
Volume	2003-January
ISBN (Electronic)	0780381572
DOIs	https://doi.org/10.1109/IRWS.2003.1283294
State	Published - Jan 1 2003
Event	2003 IEEE International Integrated Reliability Workshop, IRW 2003 - Lake Tahoe, United States Duration: Oct 20 2003 → Oct 23 2003

Other

Other	2003 IEEE International Integrated Reliability Workshop, IRW 2003
Country/Territory	United States
City	Lake Tahoe
Period	10/20/03 → 10/23/03

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IRWS.2003.1283294

Cite this

Kang, A. Y., Lenahan, P. M., Vonley, J. F., & Ono, Y. (2003). Reliability concerns for HfO₂/Si (and (ZrO₂/Si) systems: Interface and dielectric traps. In 2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003 (Vol. 2003-January, pp. 24-27). Article 1283294 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRWS.2003.1283294

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title = "Reliability concerns for HfO2/Si (and (ZrO2/Si) systems: Interface and dielectric traps",

abstract = "We report on electron photo-injection results in HfO2 films using capacitance vs. voltage (CV) and electron spin resonance measurements. CV measurements indicate presence of pre-existing large capture cross section electron traps. Electron spin resonance measurements indicate trapped electrons in the form of O-2 superoxide ions. Another center, likely a Hf+3 center, is also observed.",

author = "Kang, {A. Y.} and Lenahan, {Patrick M.} and Vonley, {J. F.} and Y. Ono",

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booktitle = "2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003",

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Kang, AY, Lenahan, PM, Vonley, JF & Ono, Y 2003, Reliability concerns for HfO₂/Si (and (ZrO₂/Si) systems: Interface and dielectric traps. in 2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003. vol. 2003-January, 1283294, Institute of Electrical and Electronics Engineers Inc., pp. 24-27, 2003 IEEE International Integrated Reliability Workshop, IRW 2003, Lake Tahoe, United States, 10/20/03. https://doi.org/10.1109/IRWS.2003.1283294

Reliability concerns for HfO₂/Si (and (ZrO₂/Si) systems: Interface and dielectric traps. / Kang, A. Y.; Lenahan, Patrick M.; Vonley, J. F. et al.
2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. p. 24-27 1283294.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - We report on electron photo-injection results in HfO2 films using capacitance vs. voltage (CV) and electron spin resonance measurements. CV measurements indicate presence of pre-existing large capture cross section electron traps. Electron spin resonance measurements indicate trapped electrons in the form of O-2 superoxide ions. Another center, likely a Hf+3 center, is also observed.

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