Abstract
We report on electron photo-injection results in HfO2 films using capacitance vs. voltage (CV) and electron spin resonance measurements. CV measurements indicate presence of pre-existing large capture cross section electron traps. Electron spin resonance measurements indicate trapped electrons in the form of O-2 superoxide ions. Another center, likely a Hf+3 center, is also observed.
Original language | English (US) |
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Title of host publication | 2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 24-27 |
Number of pages | 4 |
Volume | 2003-January |
ISBN (Electronic) | 0780381572 |
DOIs | |
State | Published - Jan 1 2003 |
Event | 2003 IEEE International Integrated Reliability Workshop, IRW 2003 - Lake Tahoe, United States Duration: Oct 20 2003 → Oct 23 2003 |
Other
Other | 2003 IEEE International Integrated Reliability Workshop, IRW 2003 |
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Country/Territory | United States |
City | Lake Tahoe |
Period | 10/20/03 → 10/23/03 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality
- Electronic, Optical and Magnetic Materials