Reliability concerns for HfO2/Si (and (ZrO2/Si) systems: Interface and dielectric traps

A. Y. Kang; P. M. Lenahan; J. F. Vonley; Y. Ono

doi:10.1109/IRWS.2003.1283294

Reliability concerns for HfO₂/Si (and (ZrO₂/Si) systems: Interface and dielectric traps

A. Y. Kang, P. M. Lenahan, J. F. Vonley, Y. Ono

Engineering Science and Mechanics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

We report on electron photo-injection results in HfO₂ films using capacitance vs. voltage (CV) and electron spin resonance measurements. CV measurements indicate presence of pre-existing large capture cross section electron traps. Electron spin resonance measurements indicate trapped electrons in the form of O_-2 superoxide ions. Another center, likely a Hf⁺³ center, is also observed.

Original language	English (US)
Title of host publication	2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	24-27
Number of pages	4
ISBN (Electronic)	0780381572
DOIs	https://doi.org/10.1109/IRWS.2003.1283294
State	Published - 2003
Event	2003 IEEE International Integrated Reliability Workshop, IRW 2003 - Lake Tahoe, United States Duration: Oct 20 2003 → Oct 23 2003

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report
Volume	2003-January

Other

Other	2003 IEEE International Integrated Reliability Workshop, IRW 2003
Country/Territory	United States
City	Lake Tahoe
Period	10/20/03 → 10/23/03

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IRWS.2003.1283294

Cite this

Kang, A. Y., Lenahan, P. M., Vonley, J. F., & Ono, Y. (2003). Reliability concerns for HfO₂/Si (and (ZrO₂/Si) systems: Interface and dielectric traps. In 2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003 (pp. 24-27). Article 1283294 (IEEE International Integrated Reliability Workshop Final Report; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRWS.2003.1283294

@inproceedings{1ddc612801df4e20a94dc87914f87e55,

title = "Reliability concerns for HfO2/Si (and (ZrO2/Si) systems: Interface and dielectric traps",

abstract = "We report on electron photo-injection results in HfO2 films using capacitance vs. voltage (CV) and electron spin resonance measurements. CV measurements indicate presence of pre-existing large capture cross section electron traps. Electron spin resonance measurements indicate trapped electrons in the form of O-2 superoxide ions. Another center, likely a Hf+3 center, is also observed.",

author = "Kang, {A. Y.} and Lenahan, {P. M.} and Vonley, {J. F.} and Y. Ono",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 IEEE International Integrated Reliability Workshop, IRW 2003 ; Conference date: 20-10-2003 Through 23-10-2003",

year = "2003",

doi = "10.1109/IRWS.2003.1283294",

language = "English (US)",

series = "IEEE International Integrated Reliability Workshop Final Report",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "24--27",

booktitle = "2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003",

address = "United States",

}

Kang, AY, Lenahan, PM, Vonley, JF & Ono, Y 2003, Reliability concerns for HfO₂/Si (and (ZrO₂/Si) systems: Interface and dielectric traps. in 2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003., 1283294, IEEE International Integrated Reliability Workshop Final Report, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 24-27, 2003 IEEE International Integrated Reliability Workshop, IRW 2003, Lake Tahoe, United States, 10/20/03. https://doi.org/10.1109/IRWS.2003.1283294

Reliability concerns for HfO₂/Si (and (ZrO₂/Si) systems: Interface and dielectric traps. / Kang, A. Y.; Lenahan, P. M.; Vonley, J. F. et al.
2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 24-27 1283294 (IEEE International Integrated Reliability Workshop Final Report; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Reliability concerns for HfO2/Si (and (ZrO2/Si) systems

T2 - 2003 IEEE International Integrated Reliability Workshop, IRW 2003

AU - Kang, A. Y.

AU - Lenahan, P. M.

AU - Vonley, J. F.

AU - Ono, Y.

PY - 2003

Y1 - 2003

N2 - We report on electron photo-injection results in HfO2 films using capacitance vs. voltage (CV) and electron spin resonance measurements. CV measurements indicate presence of pre-existing large capture cross section electron traps. Electron spin resonance measurements indicate trapped electrons in the form of O-2 superoxide ions. Another center, likely a Hf+3 center, is also observed.

AB - We report on electron photo-injection results in HfO2 films using capacitance vs. voltage (CV) and electron spin resonance measurements. CV measurements indicate presence of pre-existing large capture cross section electron traps. Electron spin resonance measurements indicate trapped electrons in the form of O-2 superoxide ions. Another center, likely a Hf+3 center, is also observed.

UR - http://www.scopus.com/inward/record.url?scp=20444445037&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20444445037&partnerID=8YFLogxK

U2 - 10.1109/IRWS.2003.1283294

DO - 10.1109/IRWS.2003.1283294

M3 - Conference contribution

AN - SCOPUS:20444445037

T3 - IEEE International Integrated Reliability Workshop Final Report

SP - 24

EP - 27

BT - 2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 20 October 2003 through 23 October 2003

ER -

Kang AY, Lenahan PM, Vonley JF, Ono Y. Reliability concerns for HfO₂/Si (and (ZrO₂/Si) systems: Interface and dielectric traps. In 2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 24-27. 1283294. (IEEE International Integrated Reliability Workshop Final Report). doi: 10.1109/IRWS.2003.1283294