TY - JOUR
T1 - Reliability of piezoelectric films for MEMS
AU - Trolier-McKinstry, Susan
AU - Zhu, Wanlin
AU - Akkopru-Akgun, Betul
AU - He, Fan
AU - Ko, Song Won
AU - Fragkiadakis, Charalampos
AU - Mardilovich, Peter
N1 - Publisher Copyright:
© 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd.
PY - 2023/11/1
Y1 - 2023/11/1
N2 - Thin films based on PbZr1−xTixO3 and K1−xNaxNbO3 are increasingly being commercialized in piezoelectric MEMS due to the comparatively low drive voltages required relative to bulk actuators, as well as the facile approach to making sensor or actuator arrays. As these materials are incorporated into devices, it is critically important that they operate reliably over the lifetime of the system. This paper discusses some of the factors controlling the electrical and electromechanical reliability of lead zirconate titanate (PZT)-based piezoMEMS films. In particular, it will be shown the gradients in the Zr/Ti ratio through the depth of the films are useful in increasing the lifetime of the films under DC electrical stresses.
AB - Thin films based on PbZr1−xTixO3 and K1−xNaxNbO3 are increasingly being commercialized in piezoelectric MEMS due to the comparatively low drive voltages required relative to bulk actuators, as well as the facile approach to making sensor or actuator arrays. As these materials are incorporated into devices, it is critically important that they operate reliably over the lifetime of the system. This paper discusses some of the factors controlling the electrical and electromechanical reliability of lead zirconate titanate (PZT)-based piezoMEMS films. In particular, it will be shown the gradients in the Zr/Ti ratio through the depth of the films are useful in increasing the lifetime of the films under DC electrical stresses.
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U2 - 10.35848/1347-4065/acf5f8
DO - 10.35848/1347-4065/acf5f8
M3 - Review article
AN - SCOPUS:85173578939
SN - 0021-4922
VL - 62
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - SM
M1 - SM0802
ER -