Abstract
The behavior of surface hydrocarbons and carbon during thermal oxidation of silicon is studied. It was established that organic contaminants are readily volatilized and do not affect, in a significant manner, the oxidation kinetics only in the case when the silicon surface during contamination is covered with an oxide at least 5 to 10 Angstrom thick. The organic removal process is substantially more effective at the higher temperatures of oxidation (900°C and above) than at the low temperature of 700°C. In the latter case, a noticeable disruption of the oxidation kinetics due to organic contaminants was observed for hydrophobic surfaces, or surfaces subjected to HF step last.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 341-356 |
| Number of pages | 16 |
| Journal | Proceedings - The Electrochemical Society |
| Volume | 90 |
| Issue number | 9 |
| State | Published - Dec 1 1990 |
| Event | Procedings of the First International Symposium on Cleaning Technology in Semiconductor Device Manufacturing (held at the 176th Meeting of the Electrochemical Society) - Hollywood, FL, USA Duration: Oct 15 1989 → Oct 20 1989 |
All Science Journal Classification (ASJC) codes
- General Engineering