Research on the fatigue damage of a polysilicon beam

Many research works on the fatigue properties of a MEMS structure have been reported. Several models have been proposed to explain the phenomena and behaviors of the specimen during their fatigue damage. No reasonable model, however, can comprehensively explain the mechanism of the fatigue damage of polysilicon. This paper focuses on the method using gradually varying parameter, for instance the mean value of Young's Modulus E, to depict the accumulation of the fatigue damage of polysilicon. The pull-in voltage of a clamped-clamped polysilicon beam is an important performance during a beam runs at our desire. The voltage is measured to reflect the accumulation of fatigue damage.