Residual impurities and native defects in 6H-SiC bulk crystals grown by halide chemical-vapor deposition

Chemistry

• Halide 100%
• Reaction Activation Energy 100%
• Chemical Vapor Deposition 100%
• Secondary Ion Mass Spectroscopy 50%
• EPR Spectroscopy 50%
• Deposition Technique 50%
• Hall Effect 50%
• Fermi Level 50%
• Conduction Band 50%
• Valence Band 50%
• Photoluminescence 50%
• Deep Level Transient Spectroscopy 50%
• Electron Trap 50%
• Hole Trap 50%

Keyphrases

• Halide Chemical Vapour Deposition 100%
• Impurity Defects 100%
• Residual Impurities 100%
• Native Defects 100%
• Site Competition 33%
• Flow Ratio 33%
• Chemical Vapor Deposition Technique 33%
• Carbon Vacancy 33%
• Incorporation Efficiency 33%

Material Science

• Chemical Vapor Deposition 100%
• Electrical Resistivity 100%
• Halide 100%
• Activation Energy 66%
• Secondary Ion Mass Spectrometry 33%
• Photoluminescence 33%
• Deep-Level Transient Spectroscopy 33%
• Materials Class 33%