TY - JOUR
T1 - Residual Stress and Ferroelastic Domain Reorientation in Declamped {001 Pb(Zr0.3Ti0.7)O3Films
AU - Denis-Rotella, Lyndsey M.
AU - Esteves, Giovanni
AU - Walker, Julian
AU - Zhou, Hanhan
AU - Jones, Jacob L.
AU - Trolier-Mckinstry, Susan
N1 - Funding Information:
Manuscript received January 30, 2020; accepted April 8, 2020. Date of publication April 13, 2020; date of current version January 26, 2021. This work was supported in part by the National Science Foundation under Grant DMR-1410907, Grant DMR-1409399, and Grant DGE-1255832, in part by the U.S. Army Research Office, in part by the National Science Foundation Graduate Research Fellowship Program, and in part by the Alfred P. Sloan Foundation under Grant G-2016-20166039. The use of the Advanced Photon Source at Argonne National Laboratory was supported by the U.S. Department of Energy under Contract DE-AC02-06CH11357. (Corresponding author: Lyndsey M. Denis-Rotella.) Lyndsey M. Denis-Rotella and Susan Trolier-McKinstry are with the Materials Science and Engineering Department, Materials Research Institute, Pennsylvania State University, University Park, PA 16802-1503 USA (e-mail: set1. . edu).
Publisher Copyright:
© 1986-2012 IEEE.
PY - 2021/2
Y1 - 2021/2
N2 - Ferroelectric films are often constrained by their substrates and subject to scaling effects, including suppressed dielectric permittivity. In this work, the thickness dependence of intrinsic and extrinsic contributions to the dielectric properties was elucidated. A novel approach to quantitatively deconstruct the relative permittivity into three contributions (intrinsic, reversible extrinsic, and irreversible extrinsic) was developed using a combination of X-ray diffraction (XRD) and Rayleigh analysis. In situ synchrotron XRD was used to understand the influence of residual stress and substrate clamping on the domain state, ferroelastic domain reorientation, and electric field-induced strain. For tetragonal {001 textured Pb0.99(Zr0.3Ti0.7)0.98Nb0.02O3 thin films clamped to an Si substrate, a thickness-dependent in-plane tensile stress developed during processing, which dictates the domain distribution over a thickness range of 0.27- 1.11~\mu \text{m}. However, after the films were partially declamped from the substrate and annealed, the residual stress was alleviated. As a result, the thickness dependence of the volume fraction of {c} -domains largely disappeared, and the out-of-plane lattice spacings ( {d} ) for both {a} - and {c} -domains increased. The volume fraction of {c} -domains was used to calculate the intrinsic relative permittivity. The reversible Rayleigh coefficient was then used to separate the intrinsic and reversible extrinsic contributions. The reversible extrinsic response accounted for 50% of the overall relative permittivity (measured at 50 Hz and alternating current (ac) field of 0.5\cdot {E}_{c} ) and was thickness dependent even after poling and upon release.
AB - Ferroelectric films are often constrained by their substrates and subject to scaling effects, including suppressed dielectric permittivity. In this work, the thickness dependence of intrinsic and extrinsic contributions to the dielectric properties was elucidated. A novel approach to quantitatively deconstruct the relative permittivity into three contributions (intrinsic, reversible extrinsic, and irreversible extrinsic) was developed using a combination of X-ray diffraction (XRD) and Rayleigh analysis. In situ synchrotron XRD was used to understand the influence of residual stress and substrate clamping on the domain state, ferroelastic domain reorientation, and electric field-induced strain. For tetragonal {001 textured Pb0.99(Zr0.3Ti0.7)0.98Nb0.02O3 thin films clamped to an Si substrate, a thickness-dependent in-plane tensile stress developed during processing, which dictates the domain distribution over a thickness range of 0.27- 1.11~\mu \text{m}. However, after the films were partially declamped from the substrate and annealed, the residual stress was alleviated. As a result, the thickness dependence of the volume fraction of {c} -domains largely disappeared, and the out-of-plane lattice spacings ( {d} ) for both {a} - and {c} -domains increased. The volume fraction of {c} -domains was used to calculate the intrinsic relative permittivity. The reversible Rayleigh coefficient was then used to separate the intrinsic and reversible extrinsic contributions. The reversible extrinsic response accounted for 50% of the overall relative permittivity (measured at 50 Hz and alternating current (ac) field of 0.5\cdot {E}_{c} ) and was thickness dependent even after poling and upon release.
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U2 - 10.1109/TUFFC.2020.2987438
DO - 10.1109/TUFFC.2020.2987438
M3 - Article
C2 - 32286973
AN - SCOPUS:85100400194
SN - 0885-3010
VL - 68
SP - 259
EP - 272
JO - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
JF - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
IS - 2
M1 - 9064678
ER -