Resist processes for ArF excimer laser lithography

Roderick R. Kunz, Mark A. Hartney, Mark W. Horn, Craig L. Keast, Mordechai Rothschild, David C. Shaver

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


A review of recent efforts to develop photoresist materials and processes for 193-nm (ArF excimer laser) photolithography is reported. Three categories of resist processes are discussed: (1) single-layer resists based on acrylate polymers, (2) silicon-polymer bilayer resists, and (3) surface-imaged positive-tone silylation resist processes. To date, materials have been developed for each process which exhibit resolution to better than 0.20 μm with sensitivities less than 50 mJ/cm2.

Original languageEnglish (US)
Pages (from-to)473-490
Number of pages18
JournalJournal of Photopolymer Science and Technology
Issue number4
StatePublished - 1993

All Science Journal Classification (ASJC) codes

  • Polymers and Plastics
  • Organic Chemistry
  • Materials Chemistry


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