Resistive switching characteristics of MnOx-based ReRAM

Sen Zhang; Shibing Long; Weihua Guan; Qi Liu; Qin Wang; Ming Liu

doi:10.1088/0022-3727/42/5/055112

Resistive switching characteristics of MnO_x-based ReRAM

Sen Zhang, Shibing Long, Weihua Guan, Qi Liu, Qin Wang, Ming Liu

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

92 Scopus citations

Abstract

The resistive switching characteristics of MnO_x thin film were investigated for resistive random access memory (ReRAM) applications. The devices in the form of metal-insulator-metal structure exhibited reversible resistive switching behaviour under both sweeping voltages and voltage pulses. Formation and rupture of conductive filaments were proposed to explain the resistive switching. When Al was used as the top electrode instead of Pt, the device had a better endurance performance. Additionally, the Pt/MnO _x/Al device showed fast switching speed and long retention ability. The experiment result suggested that Pt/MnO_x/Al device had a potentiality for practical memory application.

Original language	English (US)
Article number	055112
Journal	Journal of Physics D: Applied Physics
Volume	42
Issue number	5
DOIs	https://doi.org/10.1088/0022-3727/42/5/055112
State	Published - Apr 8 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/42/5/055112

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title = "Resistive switching characteristics of MnOx-based ReRAM",

abstract = "The resistive switching characteristics of MnOx thin film were investigated for resistive random access memory (ReRAM) applications. The devices in the form of metal-insulator-metal structure exhibited reversible resistive switching behaviour under both sweeping voltages and voltage pulses. Formation and rupture of conductive filaments were proposed to explain the resistive switching. When Al was used as the top electrode instead of Pt, the device had a better endurance performance. Additionally, the Pt/MnO x/Al device showed fast switching speed and long retention ability. The experiment result suggested that Pt/MnOx/Al device had a potentiality for practical memory application.",

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AU - Zhang, Sen

AU - Long, Shibing

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AU - Liu, Qi

AU - Wang, Qin

AU - Liu, Ming

PY - 2009/4/8

Y1 - 2009/4/8

N2 - The resistive switching characteristics of MnOx thin film were investigated for resistive random access memory (ReRAM) applications. The devices in the form of metal-insulator-metal structure exhibited reversible resistive switching behaviour under both sweeping voltages and voltage pulses. Formation and rupture of conductive filaments were proposed to explain the resistive switching. When Al was used as the top electrode instead of Pt, the device had a better endurance performance. Additionally, the Pt/MnO x/Al device showed fast switching speed and long retention ability. The experiment result suggested that Pt/MnOx/Al device had a potentiality for practical memory application.

AB - The resistive switching characteristics of MnOx thin film were investigated for resistive random access memory (ReRAM) applications. The devices in the form of metal-insulator-metal structure exhibited reversible resistive switching behaviour under both sweeping voltages and voltage pulses. Formation and rupture of conductive filaments were proposed to explain the resistive switching. When Al was used as the top electrode instead of Pt, the device had a better endurance performance. Additionally, the Pt/MnO x/Al device showed fast switching speed and long retention ability. The experiment result suggested that Pt/MnOx/Al device had a potentiality for practical memory application.

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Resistive switching characteristics of MnO_x-based ReRAM

Abstract

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