Resistive switching memory effect of Zr O2 films with Zr+ implanted

Qi Liu, Weihua Guan, Shibing Long, Rui Jia, Ming Liu, Junning Chen

Research output: Contribution to journalArticlepeer-review

269 Scopus citations


The AuCr Zr+ -implanted- Zr O2 n+ -Si sandwiched structure exhibits reversible bipolar resistive switching behavior under dc sweeping voltage. The resistance ratio (Rratio) of high resistive state and low resistive state is as large as five orders of magnitude with 0.5 V readout bias. Zr+ -implanted- Zr O2 films exhibit good retention characteristics and high device yield. The impact of implanted Zr+ ions on resistive switching performances is investigated. Resistive switching of the fabricated structures is explained by trap-controlled space charge limited current conduction.

Original languageEnglish (US)
Article number012117
JournalApplied Physics Letters
Issue number1
StatePublished - 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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