Resistive switching memory effect of Zr O2 films with Zr+ implanted

Keyphrases

• Memory Effect 100%
• Resistive Switching 100%
• Resistive Random Access Memory (ReRAM) 100%
• Resistance Ratio 50%
• Order of Magnitude 50%
• Sweeping 50%
• N-Si 50%
• Current Conduction 50%
• Sandwich Structure 50%
• Fabricated Structure 50%
• Retention Characteristics 50%
• Device Yield 50%
• Bipolar Resistive Switching 50%
• Space Charge Limited Current 50%
• Switching Performance 50%

Physics

• Resistive Switching 100%
• Memory Effect 100%
• Space Charge 25%

Engineering

• Low Resistive State 20%