@inproceedings{53fde47f6a5241a1817434401257d83d,
title = "Resistivity distribution in undoped 6H-SiC boules and wafers",
abstract = "For undoped 6H-SiC boules grown by physical vapor transport the variations of resistivity, of the type and density of deep electron and hole traps, and of the concentration of nitrogen and boron were studied as a function of position in the cross section normal to the growth axis and along the growth direction. It was observed that the concentrations of all deep electron and hole traps decreased when moving from seed to tail of the boule and from the center to the edge of the wafers. Modeling of the growth process suggests that the C/Si ratio increases in a similar fashion and could be responsible for observed changes. We also discuss the implications of such stoichiometry changes on compensation mechanisms rendering the crystals semi-insulating and on electrical uniformity of SI-SiC wafers.",
author = "Q. Li and Polyakov, {A. Y.} and M. Skowronski and Sanchez, {E. K.} and Loboda, {M. J.} and Fanton, {M. A.} and T. Bogart and D. Gamble and Smirnov, {N. B.} and Yu Makarov",
year = "2006",
month = jan,
day = "1",
doi = "10.4028/0-87849-425-1.51",
language = "English (US)",
isbn = "9780878494255",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
number = "PART 1",
pages = "51--54",
booktitle = "Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005",
edition = "PART 1",
note = "International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) ; Conference date: 18-09-2005 Through 23-09-2005",
}