Resistivity saturation in alkali-doped C60

J. G. Hou; Li Lu; Vincent H. Crespi; X. D. Xiang; A. Zettl; Marvin L. Cohen

doi:10.1016/0038-1098(94)00915-5

Resistivity saturation in alkali-doped C₆₀

J. G. Hou, Li Lu, Vincent H. Crespi, X. D. Xiang, A. Zettl, Marvin L. Cohen

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Abstract

The high-temperature resisitivity of K and Rb-doped C₆₀ single crystals was measured with pulsed heating techniques and analyzed within the parallel-resistor extension to Bloch-Boltzmann transport theory. Rb₃C₆₀ exhibits resitivity saturation with ρ{variant}_sat^Rb ≈ 6 ± 3mΩ-cm, corresponding to a saturation mean free path of ℓ_sat^Rb ≈ 1 ± 0.5 A ̊. In contrast K₃C₆₀ does not show signs of resistivity saturation up to 800 K, suggesting that ρ{variant}_sat^K > 3mΩ-cm and ℓ_sat^K < 1.5 A ̊. The electronic states at high temperature have a characteristic length scale significantly smaller than the fcc lattice constant.

Original language	English (US)
Pages (from-to)	973-977
Number of pages	5
Journal	Solid State Communications
Volume	93
Issue number	12
DOIs	https://doi.org/10.1016/0038-1098(94)00915-5
State	Published - Mar 1995

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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@article{4e355f383d8e470bbe025560f2618e5e,

title = "Resistivity saturation in alkali-doped C60",

abstract = "The high-temperature resisitivity of K and Rb-doped C60 single crystals was measured with pulsed heating techniques and analyzed within the parallel-resistor extension to Bloch-Boltzmann transport theory. Rb3C60 exhibits resitivity saturation with ρ{variant}satRb ≈ 6 ± 3mΩ-cm, corresponding to a saturation mean free path of ℓsatRb ≈ 1 ± 0.5 A ̊. In contrast K3C60 does not show signs of resistivity saturation up to 800 K, suggesting that ρ{variant}satK > 3mΩ-cm and ℓsatK < 1.5 A ̊. The electronic states at high temperature have a characteristic length scale significantly smaller than the fcc lattice constant.",

author = "Hou, {J. G.} and Li Lu and Crespi, {Vincent H.} and Xiang, {X. D.} and A. Zettl and Cohen, {Marvin L.}",

note = "Funding Information: Acknowledgements-W e have benefited greatly from the experimental assistanceo f J. Hone and from discussions with A. F. Hebard, J. H. Weaver, W. A. Vareka, B. Burk, and S. C. Erwin. This work was supported by National Science Foundation Grants No. DMR-90-17254 (JH, XX, LL and AZ) and DMR-9120269 (VHC and MLC), and the Director, Office of Energy Research, Office of Basic Energy Sciences, Materials Sciences Division of the U. S. Department of energy under Contracts No. DE-AC03-76SF00098.",

year = "1995",

month = mar,

doi = "10.1016/0038-1098(94)00915-5",

language = "English (US)",

volume = "93",

pages = "973--977",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "12",

}

TY - JOUR

T1 - Resistivity saturation in alkali-doped C60

AU - Hou, J. G.

AU - Lu, Li

AU - Crespi, Vincent H.

AU - Xiang, X. D.

AU - Zettl, A.

AU - Cohen, Marvin L.

N1 - Funding Information: Acknowledgements-W e have benefited greatly from the experimental assistanceo f J. Hone and from discussions with A. F. Hebard, J. H. Weaver, W. A. Vareka, B. Burk, and S. C. Erwin. This work was supported by National Science Foundation Grants No. DMR-90-17254 (JH, XX, LL and AZ) and DMR-9120269 (VHC and MLC), and the Director, Office of Energy Research, Office of Basic Energy Sciences, Materials Sciences Division of the U. S. Department of energy under Contracts No. DE-AC03-76SF00098.

PY - 1995/3

Y1 - 1995/3

N2 - The high-temperature resisitivity of K and Rb-doped C60 single crystals was measured with pulsed heating techniques and analyzed within the parallel-resistor extension to Bloch-Boltzmann transport theory. Rb3C60 exhibits resitivity saturation with ρ{variant}satRb ≈ 6 ± 3mΩ-cm, corresponding to a saturation mean free path of ℓsatRb ≈ 1 ± 0.5 A ̊. In contrast K3C60 does not show signs of resistivity saturation up to 800 K, suggesting that ρ{variant}satK > 3mΩ-cm and ℓsatK < 1.5 A ̊. The electronic states at high temperature have a characteristic length scale significantly smaller than the fcc lattice constant.

AB - The high-temperature resisitivity of K and Rb-doped C60 single crystals was measured with pulsed heating techniques and analyzed within the parallel-resistor extension to Bloch-Boltzmann transport theory. Rb3C60 exhibits resitivity saturation with ρ{variant}satRb ≈ 6 ± 3mΩ-cm, corresponding to a saturation mean free path of ℓsatRb ≈ 1 ± 0.5 A ̊. In contrast K3C60 does not show signs of resistivity saturation up to 800 K, suggesting that ρ{variant}satK > 3mΩ-cm and ℓsatK < 1.5 A ̊. The electronic states at high temperature have a characteristic length scale significantly smaller than the fcc lattice constant.

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DO - 10.1016/0038-1098(94)00915-5

M3 - Article

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SN - 0038-1098

VL - 93

SP - 973

EP - 977

JO - Solid State Communications

JF - Solid State Communications

IS - 12

ER -

Resistivity saturation in alkali-doped C₆₀

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