Resonant amplification of spin transferred across a GaAs/ZnSe interface

I. Malajovich; J. M. Kikkawa; D. D. Awschalom; J. J. Berry; N. Samarth

doi:10.1063/1.373252

Resonant amplification of spin transferred across a GaAs/ZnSe interface

I. Malajovich, J. M. Kikkawa, D. D. Awschalom, J. J. Berry, N. Samarth

Research output: Contribution to journal › Conference article › peer-review

18 Scopus citations

Abstract

Time-resolved Kerr rotation and resonant spin amplification are used to study spin dynamics in ZnSe epilayers and across a GaAs/ZnSe interface. In accord with previous studies in GaAs we find that modest n doping of ZnSe epilayers enhances spin lifetimes over three orders of magnitude at low temperatures. Lifetimes reaching 60 ns are seen at low doping concentrations at temperatures from 5 to 50 K. A recently developed two-color technique of time-resolved Kerr rotation is used to excite electron spins in a GaAs substrate and to measure their arrival in an adjacent ZnSe epilayer. We find that resonant spin amplification may be used to increase the net spin transferred to the ZnSe, and discover that interlayer transport extends spin lifetimes 100-fold.

Original language	English (US)
Pages (from-to)	5073-5075
Number of pages	3
Journal	Journal of Applied Physics
Volume	87
Issue number	9 II
DOIs	https://doi.org/10.1063/1.373252
State	Published - May 2000
Event	44th Annual Conference on Magnetism and Magnetic Materials - San Jose, CA, United States Duration: Nov 15 1999 → Nov 18 1999

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.373252

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title = "Resonant amplification of spin transferred across a GaAs/ZnSe interface",

abstract = "Time-resolved Kerr rotation and resonant spin amplification are used to study spin dynamics in ZnSe epilayers and across a GaAs/ZnSe interface. In accord with previous studies in GaAs we find that modest n doping of ZnSe epilayers enhances spin lifetimes over three orders of magnitude at low temperatures. Lifetimes reaching 60 ns are seen at low doping concentrations at temperatures from 5 to 50 K. A recently developed two-color technique of time-resolved Kerr rotation is used to excite electron spins in a GaAs substrate and to measure their arrival in an adjacent ZnSe epilayer. We find that resonant spin amplification may be used to increase the net spin transferred to the ZnSe, and discover that interlayer transport extends spin lifetimes 100-fold.",

author = "I. Malajovich and Kikkawa, {J. M.} and Awschalom, {D. D.} and Berry, {J. J.} and N. Samarth",

year = "2000",

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language = "English (US)",

volume = "87",

pages = "5073--5075",

journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics",

number = "9 II",

note = "44th Annual Conference on Magnetism and Magnetic Materials ; Conference date: 15-11-1999 Through 18-11-1999",

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T1 - Resonant amplification of spin transferred across a GaAs/ZnSe interface

AU - Malajovich, I.

AU - Kikkawa, J. M.

AU - Awschalom, D. D.

AU - Berry, J. J.

AU - Samarth, N.

PY - 2000/5

Y1 - 2000/5

N2 - Time-resolved Kerr rotation and resonant spin amplification are used to study spin dynamics in ZnSe epilayers and across a GaAs/ZnSe interface. In accord with previous studies in GaAs we find that modest n doping of ZnSe epilayers enhances spin lifetimes over three orders of magnitude at low temperatures. Lifetimes reaching 60 ns are seen at low doping concentrations at temperatures from 5 to 50 K. A recently developed two-color technique of time-resolved Kerr rotation is used to excite electron spins in a GaAs substrate and to measure their arrival in an adjacent ZnSe epilayer. We find that resonant spin amplification may be used to increase the net spin transferred to the ZnSe, and discover that interlayer transport extends spin lifetimes 100-fold.

AB - Time-resolved Kerr rotation and resonant spin amplification are used to study spin dynamics in ZnSe epilayers and across a GaAs/ZnSe interface. In accord with previous studies in GaAs we find that modest n doping of ZnSe epilayers enhances spin lifetimes over three orders of magnitude at low temperatures. Lifetimes reaching 60 ns are seen at low doping concentrations at temperatures from 5 to 50 K. A recently developed two-color technique of time-resolved Kerr rotation is used to excite electron spins in a GaAs substrate and to measure their arrival in an adjacent ZnSe epilayer. We find that resonant spin amplification may be used to increase the net spin transferred to the ZnSe, and discover that interlayer transport extends spin lifetimes 100-fold.

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DO - 10.1063/1.373252

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SN - 0021-8979

VL - 87

SP - 5073

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9 II

T2 - 44th Annual Conference on Magnetism and Magnetic Materials

Y2 - 15 November 1999 through 18 November 1999

ER -

Resonant amplification of spin transferred across a GaAs/ZnSe interface

Abstract

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