Resonant electron tunneling through defects in ultrathin SiO₂ gate oxides in MOSFETs

Keyphrases

• Area Density 50%
• Channel Length 50%
• Elastic Tunneling 50%
• Electron Tunneling 100%
• Full-band 50%
• Gate Leakage Current 50%
• Gate Oxide 100%
• Hot Electrons 50%
• Monte Carlo Transport Simulation 50%
• MOSFET 100%
• Order of Magnitude 50%
• Oxides 50%
• Resonant Tunneling Effect 50%
• Silica 100%
• Thick Oxide 50%
• Tight-binding 50%
• Tunneling Current 100%
• Ultrathin 100%

Material Science

• Density 25%
• Hot Electron 25%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Oxide Compound 100%