Response to "Comment on 'A model of hole trapping in SiO2 films on silicon' " [J. Appl. Phys. 83, 5591 (1998)]

P. M. Lenahan; J. F. Conley

doi:10.1063/1.367499

Response to "Comment on 'A model of hole trapping in SiO₂ films on silicon' " [J. Appl. Phys. 83, 5591 (1998)]

P. M. Lenahan
, J. F. Conley

Engineering Science and Mechanics

Research output: Contribution to journal › Letter › peer-review

2 Scopus citations

Abstract

We disagree with the comment of R. A. B. Devine, W. L. Warren, and S. Karna.

Original language	English (US)
Pages (from-to)	5593-5594
Number of pages	2
Journal	Journal of Applied Physics
Volume	83
Issue number	10
DOIs	https://doi.org/10.1063/1.367499
State	Published - 1998

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.367499

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title = "Response to {"}Comment on 'A model of hole trapping in SiO2 films on silicon' {"} [J. Appl. Phys. 83, 5591 (1998)]",

abstract = "We disagree with the comment of R. A. B. Devine, W. L. Warren, and S. Karna.",

author = "Lenahan, \{P. M.\} and Conley, \{J. F.\}",

year = "1998",

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pages = "5593--5594",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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AU - Lenahan, P. M.

AU - Conley, J. F.

PY - 1998

Y1 - 1998

N2 - We disagree with the comment of R. A. B. Devine, W. L. Warren, and S. Karna.

AB - We disagree with the comment of R. A. B. Devine, W. L. Warren, and S. Karna.

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U2 - 10.1063/1.367499

DO - 10.1063/1.367499

M3 - Letter

AN - SCOPUS:0342773414

SN - 0021-8979

VL - 83

SP - 5593

EP - 5594

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Response to "Comment on 'A model of hole trapping in SiO₂ films on silicon' " [J. Appl. Phys. 83, 5591 (1998)]

Abstract

All Science Journal Classification (ASJC) codes

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