TY - GEN
T1 - Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND Storage
AU - Qin, Yixin
AU - Chakraborty, Saikat
AU - Zhao, Zijian
AU - Ma, Sizhe
AU - Jung, Moonyoung
AU - Kim, Kijoon
AU - Lim, Suhwan
AU - Seo, Kwangyou
AU - Kim, Kwangsoo
AU - Kim, Wanki
AU - Ha, Daewon
AU - Narayanan, Vijaykrishnan
AU - Kulkarni, Jaydeep P.
AU - Ni, Kai
N1 - Publisher Copyright:
© 2025 IEEE.
PY - 2025
Y1 - 2025
N2 - This study investigates the retention behavior of gate-side injection ferroelectric FETs for vertical NAND applications. Experimental results demonstrate that thicker blocking oxide layers enhance the initial memory window but result in greater retention loss at elevated temperatures due to the higher depolarization field within the ferroelectric layer. Additionally, thinner ferroelectric layers exhibit accelerated retention degradation, while thicker ferroelectric layers provide improved stability and polarization retention over time. TCAD simulations align closely with the experimental observations, providing a detailed understanding of the interplay between polarization, charge trapping, and depolarization fields. These findings offer valuable insights into optimizing layer thicknesses to enhance the retention characteristics and reliability of future vertical ferroelectric NAND storage solutions.
AB - This study investigates the retention behavior of gate-side injection ferroelectric FETs for vertical NAND applications. Experimental results demonstrate that thicker blocking oxide layers enhance the initial memory window but result in greater retention loss at elevated temperatures due to the higher depolarization field within the ferroelectric layer. Additionally, thinner ferroelectric layers exhibit accelerated retention degradation, while thicker ferroelectric layers provide improved stability and polarization retention over time. TCAD simulations align closely with the experimental observations, providing a detailed understanding of the interplay between polarization, charge trapping, and depolarization fields. These findings offer valuable insights into optimizing layer thicknesses to enhance the retention characteristics and reliability of future vertical ferroelectric NAND storage solutions.
UR - https://www.scopus.com/pages/publications/105005831854
UR - https://www.scopus.com/pages/publications/105005831854#tab=citedBy
U2 - 10.1109/IRPS48204.2025.10983219
DO - 10.1109/IRPS48204.2025.10983219
M3 - Conference contribution
AN - SCOPUS:105005831854
T3 - IEEE International Reliability Physics Symposium Proceedings
BT - 2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2025 IEEE International Reliability Physics Symposium, IRPS 2025
Y2 - 30 March 2025 through 3 April 2025
ER -