Reverse current transport mechanism in shallow junctions containing silicide spikes

D. Z. Chi; W. D. Wang; S. J. Chua; S. Ashok

doi:10.1063/1.1521511

Reverse current transport mechanism in shallow junctions containing silicide spikes

D. Z. Chi, W. D. Wang, S. J. Chua, S. Ashok

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Abstract

The discussion on a physical model describing the current transport mechanism in shallow Si p-n junctions containing silicide spikes was done. The model included analytical calculations of tunneling probability of electrons at the silicide/silicon interface and maximum electrical field around a silicide spike tip. The explanation of athermal behavior of the reverse current in the shallow junctions was given in terms of electric field enhancement at the sharp spikes.

Original language	English (US)
Pages (from-to)	7532-7535
Number of pages	4
Journal	Journal of Applied Physics
Volume	92
Issue number	12
DOIs	https://doi.org/10.1063/1.1521511
State	Published - Dec 15 2002

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.1521511

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title = "Reverse current transport mechanism in shallow junctions containing silicide spikes",

abstract = "The discussion on a physical model describing the current transport mechanism in shallow Si p-n junctions containing silicide spikes was done. The model included analytical calculations of tunneling probability of electrons at the silicide/silicon interface and maximum electrical field around a silicide spike tip. The explanation of athermal behavior of the reverse current in the shallow junctions was given in terms of electric field enhancement at the sharp spikes.",

author = "Chi, {D. Z.} and Wang, {W. D.} and Chua, {S. J.} and S. Ashok",

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AU - Chua, S. J.

AU - Ashok, S.

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N2 - The discussion on a physical model describing the current transport mechanism in shallow Si p-n junctions containing silicide spikes was done. The model included analytical calculations of tunneling probability of electrons at the silicide/silicon interface and maximum electrical field around a silicide spike tip. The explanation of athermal behavior of the reverse current in the shallow junctions was given in terms of electric field enhancement at the sharp spikes.

AB - The discussion on a physical model describing the current transport mechanism in shallow Si p-n junctions containing silicide spikes was done. The model included analytical calculations of tunneling probability of electrons at the silicide/silicon interface and maximum electrical field around a silicide spike tip. The explanation of athermal behavior of the reverse current in the shallow junctions was given in terms of electric field enhancement at the sharp spikes.

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Reverse current transport mechanism in shallow junctions containing silicide spikes

Abstract

All Science Journal Classification (ASJC) codes

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