Reverse current transport mechanism in shallow junctions containing silicide spikes

D. Z. Chi; W. D. Wang; S. J. Chua; S. Ashok

doi:10.1063/1.1521511

Reverse current transport mechanism in shallow junctions containing silicide spikes

D. Z. Chi
, W. D. Wang
, S. J. Chua
, S. Ashok

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The discussion on a physical model describing the current transport mechanism in shallow Si p-n junctions containing silicide spikes was done. The model included analytical calculations of tunneling probability of electrons at the silicide/silicon interface and maximum electrical field around a silicide spike tip. The explanation of athermal behavior of the reverse current in the shallow junctions was given in terms of electric field enhancement at the sharp spikes.

Original language	English (US)
Pages (from-to)	7532-7535
Number of pages	4
Journal	Journal of Applied Physics
Volume	92
Issue number	12
DOIs	https://doi.org/10.1063/1.1521511
State	Published - Dec 15 2002

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.1521511

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@article{0aa6d6f17563436c8f415e49d82bee91,

title = "Reverse current transport mechanism in shallow junctions containing silicide spikes",

abstract = "The discussion on a physical model describing the current transport mechanism in shallow Si p-n junctions containing silicide spikes was done. The model included analytical calculations of tunneling probability of electrons at the silicide/silicon interface and maximum electrical field around a silicide spike tip. The explanation of athermal behavior of the reverse current in the shallow junctions was given in terms of electric field enhancement at the sharp spikes.",

author = "Chi, \{D. Z.\} and Wang, \{W. D.\} and Chua, \{S. J.\} and S. Ashok",

year = "2002",

month = dec,

day = "15",

doi = "10.1063/1.1521511",

language = "English (US)",

volume = "92",

pages = "7532--7535",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Reverse current transport mechanism in shallow junctions containing silicide spikes

AU - Chi, D. Z.

AU - Wang, W. D.

AU - Chua, S. J.

AU - Ashok, S.

PY - 2002/12/15

Y1 - 2002/12/15

N2 - The discussion on a physical model describing the current transport mechanism in shallow Si p-n junctions containing silicide spikes was done. The model included analytical calculations of tunneling probability of electrons at the silicide/silicon interface and maximum electrical field around a silicide spike tip. The explanation of athermal behavior of the reverse current in the shallow junctions was given in terms of electric field enhancement at the sharp spikes.

AB - The discussion on a physical model describing the current transport mechanism in shallow Si p-n junctions containing silicide spikes was done. The model included analytical calculations of tunneling probability of electrons at the silicide/silicon interface and maximum electrical field around a silicide spike tip. The explanation of athermal behavior of the reverse current in the shallow junctions was given in terms of electric field enhancement at the sharp spikes.

UR - https://www.scopus.com/pages/publications/0037115465

UR - https://www.scopus.com/pages/publications/0037115465#tab=citedBy

U2 - 10.1063/1.1521511

DO - 10.1063/1.1521511

M3 - Article

AN - SCOPUS:0037115465

SN - 0021-8979

VL - 92

SP - 7532

EP - 7535

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Reverse current transport mechanism in shallow junctions containing silicide spikes

Abstract

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