Reversing of silicon surface aging by lamp cleaning

K. Shanmugasundaram; K. Chang; Jeffrey Shallenberger; A. Danel; F. Tardif; M. Veillerot; Jerzy Ruzyllo

Reversing of silicon surface aging by lamp cleaning

K. Shanmugasundaram, K. Chang, Jeffrey Shallenberger, A. Danel, F. Tardif, M. Veillerot, Jerzy Ruzyllo

Research output: Contribution to conference › Paper › peer-review

Abstract

Chemical composition of Si surfaces subjected to prolonged storage undergoes significant changes. In this study the accumulation of organic contaminants on Si surfaces and the removal of such organic contaminants using lamp illumination were investigated. It is shown that Rapid Thermal Cleaning (RTC) implemented using infra-red lamps can reverse the effect of "surface aging" provided that in the course of prolonged storage the volatile organics are not transformed into non-volatile compounds. As expected, the best results were obtained using a strong oxidizing ambient such as ozone.

Original language	English (US)
Pages	348-355
Number of pages	8
State	Published - Dec 1 2003
Event	Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium - Orlando, FL., United States Duration: Oct 12 2003 → Oct 17 2003

Other

Other	Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium
Country/Territory	United States
City	Orlando, FL.
Period	10/12/03 → 10/17/03

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

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title = "Reversing of silicon surface aging by lamp cleaning",

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author = "K. Shanmugasundaram and K. Chang and Jeffrey Shallenberger and A. Danel and F. Tardif and M. Veillerot and Jerzy Ruzyllo",

year = "2003",

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T1 - Reversing of silicon surface aging by lamp cleaning

AU - Shanmugasundaram, K.

AU - Chang, K.

AU - Shallenberger, Jeffrey

AU - Danel, A.

AU - Tardif, F.

AU - Veillerot, M.

AU - Ruzyllo, Jerzy

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Chemical composition of Si surfaces subjected to prolonged storage undergoes significant changes. In this study the accumulation of organic contaminants on Si surfaces and the removal of such organic contaminants using lamp illumination were investigated. It is shown that Rapid Thermal Cleaning (RTC) implemented using infra-red lamps can reverse the effect of "surface aging" provided that in the course of prolonged storage the volatile organics are not transformed into non-volatile compounds. As expected, the best results were obtained using a strong oxidizing ambient such as ozone.

AB - Chemical composition of Si surfaces subjected to prolonged storage undergoes significant changes. In this study the accumulation of organic contaminants on Si surfaces and the removal of such organic contaminants using lamp illumination were investigated. It is shown that Rapid Thermal Cleaning (RTC) implemented using infra-red lamps can reverse the effect of "surface aging" provided that in the course of prolonged storage the volatile organics are not transformed into non-volatile compounds. As expected, the best results were obtained using a strong oxidizing ambient such as ozone.

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M3 - Paper

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T2 - Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium

Y2 - 12 October 2003 through 17 October 2003

ER -

Reversing of silicon surface aging by lamp cleaning

Abstract

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All Science Journal Classification (ASJC) codes

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