Abstract
Chemical composition of Si surfaces subjected to prolonged storage undergoes significant changes. In this study the accumulation of organic contaminants on Si surfaces and the removal of such organic contaminants using lamp illumination were investigated. It is shown that Rapid Thermal Cleaning (RTC) implemented using infra-red lamps can reverse the effect of "surface aging" provided that in the course of prolonged storage the volatile organics are not transformed into non-volatile compounds. As expected, the best results were obtained using a strong oxidizing ambient such as ozone.
Original language | English (US) |
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Pages | 348-355 |
Number of pages | 8 |
State | Published - Dec 1 2003 |
Event | Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium - Orlando, FL., United States Duration: Oct 12 2003 → Oct 17 2003 |
Other
Other | Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium |
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Country/Territory | United States |
City | Orlando, FL. |
Period | 10/12/03 → 10/17/03 |
All Science Journal Classification (ASJC) codes
- General Engineering