TY - JOUR
T1 - Review of Nanolayered Post-transition Metal Monochalcogenides
T2 - Synthesis, Properties, and Applications
AU - Yu, Mingyu
AU - Hilse, Maria
AU - Zhang, Qihua
AU - Liu, Yongchen
AU - Wang, Zhengtianye
AU - Law, Stephanie
N1 - Publisher Copyright:
© 2024 American Chemical Society.
PY - 2024/12/27
Y1 - 2024/12/27
N2 - Nanolayered post-transition metal monochalcogenides (PTMMCs) stand out as promising advanced two-dimensional (2D) materials. Beyond inheriting the general advantages associated with traditional 2D materials, they exhibit unique properties, including a wide bandgap range covering the ultraviolet to the mid-infrared spectral ranges, thickness-dependent bandgap behaviors, good nonlinear optical performance, high thermoelectric coefficients, and ferroelectricity. Consequently, these materials hold significant potential in diverse applications such as photodetectors, field effect transistors, thermoelectrics, ferroelectrics, photovoltaics, and electrochemical devices, especially in the manufacturing of nanoscale devices. However, there is still a lack of systematic understanding of the PTMMC family. This study provides a broad overview of the crystal structures, bandgap structures, synthesis methods, physical properties, and state-of-the-art applications of PTMMC materials with a motif of X-M-M-X (M = Ga, In, Ge, Sn; X = S, Se, Te). An outlook for the development trends is emphasized at the end, underscoring the critical importance of this work to the future exploration of nanolayered PTMMCs.
AB - Nanolayered post-transition metal monochalcogenides (PTMMCs) stand out as promising advanced two-dimensional (2D) materials. Beyond inheriting the general advantages associated with traditional 2D materials, they exhibit unique properties, including a wide bandgap range covering the ultraviolet to the mid-infrared spectral ranges, thickness-dependent bandgap behaviors, good nonlinear optical performance, high thermoelectric coefficients, and ferroelectricity. Consequently, these materials hold significant potential in diverse applications such as photodetectors, field effect transistors, thermoelectrics, ferroelectrics, photovoltaics, and electrochemical devices, especially in the manufacturing of nanoscale devices. However, there is still a lack of systematic understanding of the PTMMC family. This study provides a broad overview of the crystal structures, bandgap structures, synthesis methods, physical properties, and state-of-the-art applications of PTMMC materials with a motif of X-M-M-X (M = Ga, In, Ge, Sn; X = S, Se, Te). An outlook for the development trends is emphasized at the end, underscoring the critical importance of this work to the future exploration of nanolayered PTMMCs.
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U2 - 10.1021/acsanm.3c05984
DO - 10.1021/acsanm.3c05984
M3 - Review article
AN - SCOPUS:85186247614
SN - 2574-0970
VL - 7
SP - 28008
EP - 28026
JO - ACS Applied Nano Materials
JF - ACS Applied Nano Materials
IS - 24
ER -