Review of Nanolayered Post-transition Metal Monochalcogenides: Synthesis, Properties, and Applications

Mingyu Yu, Maria Hilse, Qihua Zhang, Yongchen Liu, Zhengtianye Wang, Stephanie Law

Research output: Contribution to journalReview articlepeer-review

7 Scopus citations

Abstract

Nanolayered post-transition metal monochalcogenides (PTMMCs) stand out as promising advanced two-dimensional (2D) materials. Beyond inheriting the general advantages associated with traditional 2D materials, they exhibit unique properties, including a wide bandgap range covering the ultraviolet to the mid-infrared spectral ranges, thickness-dependent bandgap behaviors, good nonlinear optical performance, high thermoelectric coefficients, and ferroelectricity. Consequently, these materials hold significant potential in diverse applications such as photodetectors, field effect transistors, thermoelectrics, ferroelectrics, photovoltaics, and electrochemical devices, especially in the manufacturing of nanoscale devices. However, there is still a lack of systematic understanding of the PTMMC family. This study provides a broad overview of the crystal structures, bandgap structures, synthesis methods, physical properties, and state-of-the-art applications of PTMMC materials with a motif of X-M-M-X (M = Ga, In, Ge, Sn; X = S, Se, Te). An outlook for the development trends is emphasized at the end, underscoring the critical importance of this work to the future exploration of nanolayered PTMMCs.

Original languageEnglish (US)
Pages (from-to)28008-28026
Number of pages19
JournalACS Applied Nano Materials
Volume7
Issue number24
DOIs
StatePublished - Dec 27 2024

All Science Journal Classification (ASJC) codes

  • General Materials Science

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