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Review-Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors
S. J. Pearton
, Assel Aitkaliyeva
, Minghan Xian
, Fan Ren
, Ani Khachatrian
, Adrian Ildefonso
, Zahabul Islam
, Md Abu Jafar Rasel
,
Aman Haque
, A. Y. Polyakov
, Jihyun Kim
Penn State Scranton
Mechanical Engineering
Research output
:
Contribution to journal
›
Review article
›
peer-review
150
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Keyphrases
Diamond
100%
Radiation Damage
100%
Ultra-wide Bandgap Semiconductors
100%
Heavy Ions
75%
Single Event Effects
75%
Ga2O3
50%
Neutron
50%
Radiation Hardness
50%
Galactic Cosmic Rays
50%
Operating Voltage
50%
SiC Transistors
50%
Chemical Vapor Deposition
25%
Leakage Current
25%
Radiation Exposure
25%
Schottky Diode
25%
Induced Damage
25%
Sp3 Hybridization
25%
Pion
25%
Catastrophic Failure
25%
Simulated Conditions
25%
Solar-blind UV Detector
25%
Radiation Detection
25%
Testing Conditions
25%
Power Device
25%
Power Market
25%
High Temperature Operation
25%
Neutron Dose
25%
Induced Degradation
25%
Energetic Protons
25%
Automotive Power
25%
Induced Failures
25%
Industrial Power
25%
Cubic Boron Nitride (c-BN)
25%
Displacement Damage
25%
Degradation Failure
25%
High Energy Physics Applications
25%
GaN Transistor
25%
Rated Voltage
25%
Space Radiation Environment
25%
Average Bond Stress
25%
Single Event Burnout
25%
Temperature Capability
25%
High Power
25%
Wireless Power
25%
Hexagonal Boron Nitride (h-BN)
25%
Power Electronics
25%
Wide Bandgap Semiconductors
25%
Radiation Resistant
25%
Space Applications
25%
Avionic Application
25%
Material Science
Diamond
100%
Radiation Damage
100%
Wide Bandgap Semiconductor
100%
Transistor
50%
Power Device
50%
Chemical Vapor Deposition
25%
Schottky Diode
25%
Cubic Boron Nitride
25%