RF dielectric loss due to MOCVD aluminum nitride on high resistivity silicon

Feyza Berber; Derek W. Johnson; Kyle M. Sundqvist; Edwin L. Piner; Gregory H. Huff; H. Rusty Harris

doi:10.1109/TMTT.2017.2656865

RF dielectric loss due to MOCVD aluminum nitride on high resistivity silicon

Feyza Berber, Derek W. Johnson, Kyle M. Sundqvist, Edwin L. Piner, Gregory H. Huff, H. Rusty Harris

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The contribution of high-frequency losses from an aluminum nitride (AlN) layer on high resistivity silicon (Si) is reported. The AlN, deposited on silicon via metalorganic chemical vapor phase deposition as a nucleation layer for subsequent gallium nitride growth, is analyzed for its contribution to the dielectric losses from 6-20 GHz and differentiated from the loss due to the p-type layer formed in the silicon substrate. It is found that AlN is a stronger contributor to overall dielectric loss in comparison with the silicon substrate.

Original language	English (US)
Article number	7851029
Pages (from-to)	1465-1470
Number of pages	6
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	65
Issue number	5
DOIs	https://doi.org/10.1109/TMTT.2017.2656865
State	Published - May 2017

All Science Journal Classification (ASJC) codes

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/TMTT.2017.2656865

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title = "RF dielectric loss due to MOCVD aluminum nitride on high resistivity silicon",

abstract = "The contribution of high-frequency losses from an aluminum nitride (AlN) layer on high resistivity silicon (Si) is reported. The AlN, deposited on silicon via metalorganic chemical vapor phase deposition as a nucleation layer for subsequent gallium nitride growth, is analyzed for its contribution to the dielectric losses from 6-20 GHz and differentiated from the loss due to the p-type layer formed in the silicon substrate. It is found that AlN is a stronger contributor to overall dielectric loss in comparison with the silicon substrate.",

author = "Feyza Berber and Johnson, {Derek W.} and Sundqvist, {Kyle M.} and Piner, {Edwin L.} and Huff, {Gregory H.} and {Rusty Harris}, H.",

note = "Funding Information: This work was supported by the Office of Naval Research under Grant N00014-12-1-0971. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2017",

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language = "English (US)",

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AU - Berber, Feyza

AU - Johnson, Derek W.

AU - Sundqvist, Kyle M.

AU - Piner, Edwin L.

AU - Huff, Gregory H.

AU - Rusty Harris, H.

PY - 2017/5

Y1 - 2017/5

N2 - The contribution of high-frequency losses from an aluminum nitride (AlN) layer on high resistivity silicon (Si) is reported. The AlN, deposited on silicon via metalorganic chemical vapor phase deposition as a nucleation layer for subsequent gallium nitride growth, is analyzed for its contribution to the dielectric losses from 6-20 GHz and differentiated from the loss due to the p-type layer formed in the silicon substrate. It is found that AlN is a stronger contributor to overall dielectric loss in comparison with the silicon substrate.

AB - The contribution of high-frequency losses from an aluminum nitride (AlN) layer on high resistivity silicon (Si) is reported. The AlN, deposited on silicon via metalorganic chemical vapor phase deposition as a nucleation layer for subsequent gallium nitride growth, is analyzed for its contribution to the dielectric losses from 6-20 GHz and differentiated from the loss due to the p-type layer formed in the silicon substrate. It is found that AlN is a stronger contributor to overall dielectric loss in comparison with the silicon substrate.

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JF - IEEE Transactions on Microwave Theory and Techniques

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ER -

RF dielectric loss due to MOCVD aluminum nitride on high resistivity silicon

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