RF dielectric loss due to MOCVD aluminum nitride on high resistivity silicon

Feyza Berber; Derek W. Johnson; Kyle M. Sundqvist; Edwin L. Piner; Gregory H. Huff; H. Rusty Harris

doi:10.1109/TMTT.2017.2656865

RF dielectric loss due to MOCVD aluminum nitride on high resistivity silicon

Feyza Berber
, Derek W. Johnson
, Kyle M. Sundqvist
, Edwin L. Piner
, Gregory H. Huff
, H. Rusty Harris

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

The contribution of high-frequency losses from an aluminum nitride (AlN) layer on high resistivity silicon (Si) is reported. The AlN, deposited on silicon via metalorganic chemical vapor phase deposition as a nucleation layer for subsequent gallium nitride growth, is analyzed for its contribution to the dielectric losses from 6-20 GHz and differentiated from the loss due to the p-type layer formed in the silicon substrate. It is found that AlN is a stronger contributor to overall dielectric loss in comparison with the silicon substrate.

Original language	English (US)
Article number	7851029
Pages (from-to)	1465-1470
Number of pages	6
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	65
Issue number	5
DOIs	https://doi.org/10.1109/TMTT.2017.2656865
State	Published - May 2017

All Science Journal Classification (ASJC) codes

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/TMTT.2017.2656865

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@article{df3e1bee57164d928b2b08bd695b4dde,

title = "RF dielectric loss due to MOCVD aluminum nitride on high resistivity silicon",

abstract = "The contribution of high-frequency losses from an aluminum nitride (AlN) layer on high resistivity silicon (Si) is reported. The AlN, deposited on silicon via metalorganic chemical vapor phase deposition as a nucleation layer for subsequent gallium nitride growth, is analyzed for its contribution to the dielectric losses from 6-20 GHz and differentiated from the loss due to the p-type layer formed in the silicon substrate. It is found that AlN is a stronger contributor to overall dielectric loss in comparison with the silicon substrate.",

author = "Feyza Berber and Johnson, \{Derek W.\} and Sundqvist, \{Kyle M.\} and Piner, \{Edwin L.\} and Huff, \{Gregory H.\} and \{Rusty Harris\}, H.",

note = "Funding Information: This work was supported by the Office of Naval Research under Grant N00014-12-1-0971. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2017",

month = may,

doi = "10.1109/TMTT.2017.2656865",

language = "English (US)",

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T1 - RF dielectric loss due to MOCVD aluminum nitride on high resistivity silicon

AU - Berber, Feyza

AU - Johnson, Derek W.

AU - Sundqvist, Kyle M.

AU - Piner, Edwin L.

AU - Huff, Gregory H.

AU - Rusty Harris, H.

PY - 2017/5

Y1 - 2017/5

N2 - The contribution of high-frequency losses from an aluminum nitride (AlN) layer on high resistivity silicon (Si) is reported. The AlN, deposited on silicon via metalorganic chemical vapor phase deposition as a nucleation layer for subsequent gallium nitride growth, is analyzed for its contribution to the dielectric losses from 6-20 GHz and differentiated from the loss due to the p-type layer formed in the silicon substrate. It is found that AlN is a stronger contributor to overall dielectric loss in comparison with the silicon substrate.

AB - The contribution of high-frequency losses from an aluminum nitride (AlN) layer on high resistivity silicon (Si) is reported. The AlN, deposited on silicon via metalorganic chemical vapor phase deposition as a nucleation layer for subsequent gallium nitride growth, is analyzed for its contribution to the dielectric losses from 6-20 GHz and differentiated from the loss due to the p-type layer formed in the silicon substrate. It is found that AlN is a stronger contributor to overall dielectric loss in comparison with the silicon substrate.

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UR - https://www.scopus.com/pages/publications/85012977962#tab=citedBy

U2 - 10.1109/TMTT.2017.2656865

DO - 10.1109/TMTT.2017.2656865

M3 - Article

AN - SCOPUS:85012977962

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SP - 1465

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JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 5

M1 - 7851029

ER -

RF dielectric loss due to MOCVD aluminum nitride on high resistivity silicon

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