Richardson constant of Al- and Au-GaAs Schottky barrier diodes

J. M. Borrego; R. J. Gutmann; S. Ashok

doi:10.1063/1.89321

Richardson constant of Al- and Au-GaAs Schottky barrier diodes

J. M. Borrego, R. J. Gutmann, S. Ashok

Engineering Science and Mechanics

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21 Scopus citations

Abstract

The Richardson constant of Al- and Au-nGaAs Schottky barrier diodes of low doping concentration has been determined from the measured forward I-V characteristics. Richardson constants higher than the theoretical are related to the presence of an additional majority-carrier current caused by recombination of electrons at traps at the metal-semiconductor interface. The data shows that the traps are located approximately 0.75 eV below the conduction band and are in equilibrium with the metal.

Original language	English (US)
Pages (from-to)	169-172
Number of pages	4
Journal	Applied Physics Letters
Volume	30
Issue number	3
DOIs	https://doi.org/10.1063/1.89321
State	Published - 1977

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.89321

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title = "Richardson constant of Al- and Au-GaAs Schottky barrier diodes",

abstract = "The Richardson constant of Al- and Au-nGaAs Schottky barrier diodes of low doping concentration has been determined from the measured forward I-V characteristics. Richardson constants higher than the theoretical are related to the presence of an additional majority-carrier current caused by recombination of electrons at traps at the metal-semiconductor interface. The data shows that the traps are located approximately 0.75 eV below the conduction band and are in equilibrium with the metal.",

author = "Borrego, {J. M.} and Gutmann, {R. J.} and S. Ashok",

year = "1977",

doi = "10.1063/1.89321",

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pages = "169--172",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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AU - Borrego, J. M.

AU - Gutmann, R. J.

AU - Ashok, S.

PY - 1977

Y1 - 1977

N2 - The Richardson constant of Al- and Au-nGaAs Schottky barrier diodes of low doping concentration has been determined from the measured forward I-V characteristics. Richardson constants higher than the theoretical are related to the presence of an additional majority-carrier current caused by recombination of electrons at traps at the metal-semiconductor interface. The data shows that the traps are located approximately 0.75 eV below the conduction band and are in equilibrium with the metal.

AB - The Richardson constant of Al- and Au-nGaAs Schottky barrier diodes of low doping concentration has been determined from the measured forward I-V characteristics. Richardson constants higher than the theoretical are related to the presence of an additional majority-carrier current caused by recombination of electrons at traps at the metal-semiconductor interface. The data shows that the traps are located approximately 0.75 eV below the conduction band and are in equilibrium with the metal.

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ER -

Richardson constant of Al- and Au-GaAs Schottky barrier diodes

Abstract

All Science Journal Classification (ASJC) codes

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