Richardson constant of Al- and Au-GaAs Schottky barrier diodes

J. M. Borrego; R. J. Gutmann; S. Ashok

doi:10.1063/1.89321

Richardson constant of Al- and Au-GaAs Schottky barrier diodes

J. M. Borrego
, R. J. Gutmann
, S. Ashok

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

The Richardson constant of Al- and Au-nGaAs Schottky barrier diodes of low doping concentration has been determined from the measured forward I-V characteristics. Richardson constants higher than the theoretical are related to the presence of an additional majority-carrier current caused by recombination of electrons at traps at the metal-semiconductor interface. The data shows that the traps are located approximately 0.75 eV below the conduction band and are in equilibrium with the metal.

Original language	English (US)
Pages (from-to)	169-172
Number of pages	4
Journal	Applied Physics Letters
Volume	30
Issue number	3
DOIs	https://doi.org/10.1063/1.89321
State	Published - 1977

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.89321

Cite this

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title = "Richardson constant of Al- and Au-GaAs Schottky barrier diodes",

abstract = "The Richardson constant of Al- and Au-nGaAs Schottky barrier diodes of low doping concentration has been determined from the measured forward I-V characteristics. Richardson constants higher than the theoretical are related to the presence of an additional majority-carrier current caused by recombination of electrons at traps at the metal-semiconductor interface. The data shows that the traps are located approximately 0.75 eV below the conduction band and are in equilibrium with the metal.",

author = "Borrego, \{J. M.\} and Gutmann, \{R. J.\} and S. Ashok",

year = "1977",

doi = "10.1063/1.89321",

language = "English (US)",

volume = "30",

pages = "169--172",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

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T1 - Richardson constant of Al- and Au-GaAs Schottky barrier diodes

AU - Borrego, J. M.

AU - Gutmann, R. J.

AU - Ashok, S.

PY - 1977

Y1 - 1977

N2 - The Richardson constant of Al- and Au-nGaAs Schottky barrier diodes of low doping concentration has been determined from the measured forward I-V characteristics. Richardson constants higher than the theoretical are related to the presence of an additional majority-carrier current caused by recombination of electrons at traps at the metal-semiconductor interface. The data shows that the traps are located approximately 0.75 eV below the conduction band and are in equilibrium with the metal.

AB - The Richardson constant of Al- and Au-nGaAs Schottky barrier diodes of low doping concentration has been determined from the measured forward I-V characteristics. Richardson constants higher than the theoretical are related to the presence of an additional majority-carrier current caused by recombination of electrons at traps at the metal-semiconductor interface. The data shows that the traps are located approximately 0.75 eV below the conduction band and are in equilibrium with the metal.

UR - https://www.scopus.com/pages/publications/0039663718

UR - https://www.scopus.com/pages/publications/0039663718#tab=citedBy

U2 - 10.1063/1.89321

DO - 10.1063/1.89321

M3 - Article

AN - SCOPUS:0039663718

SN - 0003-6951

VL - 30

SP - 169

EP - 172

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Richardson constant of Al- and Au-GaAs Schottky barrier diodes

Abstract

All Science Journal Classification (ASJC) codes

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