ROLE OF INTERFACE STATES IN PHOTOELECTROCHEMICAL CELLS.

S. Kar; S. Jain; Adam Heller; S. Ashok; S. J. Fonash

doi:10.1109/iedm.1980.189887

ROLE OF INTERFACE STATES IN PHOTOELECTROCHEMICAL CELLS.

S. Kar, S. Jain, Adam Heller, S. Ashok, S. J. Fonash

Research output: Contribution to journal › Conference article › peer-review

Abstract

Theoretical and experimental analysis of the role of the surface states in photoelectrochemical cells has been carried out. The possible role of interface states in the potential barrier in the semiconductor space charge layer, in the change of the interphase potential with the photovoltage, and in the transfer of charge across the interphase have been discussed. The effect of ruthenium treatment of the GaAs electrode on the interface states in n-GaAs/0. 8M K//2Se-0. 1M K//2Se//2-1M KOH/C cell has been experimentally analyzed.

Original language	English (US)
Pages (from-to)	538-544
Number of pages	7
Journal	Unknown Journal
DOIs	https://doi.org/10.1109/iedm.1980.189887
State	Published - 1980
Event	Tech Dig Int Electron Devices Meet - Washington, DC, USA Duration: Dec 8 1980 → Dec 10 1980

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/iedm.1980.189887

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title = "ROLE OF INTERFACE STATES IN PHOTOELECTROCHEMICAL CELLS.",

abstract = "Theoretical and experimental analysis of the role of the surface states in photoelectrochemical cells has been carried out. The possible role of interface states in the potential barrier in the semiconductor space charge layer, in the change of the interphase potential with the photovoltage, and in the transfer of charge across the interphase have been discussed. The effect of ruthenium treatment of the GaAs electrode on the interface states in n-GaAs/0. 8M K//2Se-0. 1M K//2Se//2-1M KOH/C cell has been experimentally analyzed.",

author = "S. Kar and S. Jain and Adam Heller and S. Ashok and Fonash, {S. J.}",

year = "1980",

doi = "10.1109/iedm.1980.189887",

language = "English (US)",

pages = "538--544",

journal = "Unknown Journal",

issn = "0042-1215",

note = "Tech Dig Int Electron Devices Meet ; Conference date: 08-12-1980 Through 10-12-1980",

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T1 - ROLE OF INTERFACE STATES IN PHOTOELECTROCHEMICAL CELLS.

AU - Kar, S.

AU - Jain, S.

AU - Heller, Adam

AU - Ashok, S.

AU - Fonash, S. J.

PY - 1980

Y1 - 1980

N2 - Theoretical and experimental analysis of the role of the surface states in photoelectrochemical cells has been carried out. The possible role of interface states in the potential barrier in the semiconductor space charge layer, in the change of the interphase potential with the photovoltage, and in the transfer of charge across the interphase have been discussed. The effect of ruthenium treatment of the GaAs electrode on the interface states in n-GaAs/0. 8M K//2Se-0. 1M K//2Se//2-1M KOH/C cell has been experimentally analyzed.

AB - Theoretical and experimental analysis of the role of the surface states in photoelectrochemical cells has been carried out. The possible role of interface states in the potential barrier in the semiconductor space charge layer, in the change of the interphase potential with the photovoltage, and in the transfer of charge across the interphase have been discussed. The effect of ruthenium treatment of the GaAs electrode on the interface states in n-GaAs/0. 8M K//2Se-0. 1M K//2Se//2-1M KOH/C cell has been experimentally analyzed.

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EP - 544

JO - Unknown Journal

JF - Unknown Journal

T2 - Tech Dig Int Electron Devices Meet

Y2 - 8 December 1980 through 10 December 1980

ER -

ROLE OF INTERFACE STATES IN PHOTOELECTROCHEMICAL CELLS.

Abstract

All Science Journal Classification (ASJC) codes

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