TY - GEN
T1 - Role of processing parameters on morphology, resistance and composition of laser fired contacts
AU - Raghavan, A.
AU - Palmer, T. A.
AU - Domask, A.
AU - Mohney, S.
AU - Reutzel, E. W.
AU - DebRoy, T.
PY - 2013
Y1 - 2013
N2 - Laser processing is a single step, attractive alternative to current multi-step formation of ohmic contacts between an aluminum metallization layer and a silicon substrate in solar cell devices. However, small changes in laser parameters such as pulse duration, power density and laser wavelength can result in significant differences in the contact geometry and electrical properties. Here, the effects of power density and pulse duration on the morphology, resistance and surface concentration of laser fired contacts (LFCs) are examined experimentally. The minimum fluence threshold for forming a contact with measureable resistance through the 100nm SiO2 layer is determined to be 8 J/cm2. In addition, when forming the contact, an outer rim region accumulates on the surface that is comprised of aluminum and silicon. As a result, the entire contact is actually governed by the size of an inner crater region plus this outer rim material, which is in contrast to results reported in the literature for nanosecond pulse durations. These results are in good agreement with independent results reported in the literature for LFCs processed on wafers with substantially different base resistivity and using significantly different processing parameters.
AB - Laser processing is a single step, attractive alternative to current multi-step formation of ohmic contacts between an aluminum metallization layer and a silicon substrate in solar cell devices. However, small changes in laser parameters such as pulse duration, power density and laser wavelength can result in significant differences in the contact geometry and electrical properties. Here, the effects of power density and pulse duration on the morphology, resistance and surface concentration of laser fired contacts (LFCs) are examined experimentally. The minimum fluence threshold for forming a contact with measureable resistance through the 100nm SiO2 layer is determined to be 8 J/cm2. In addition, when forming the contact, an outer rim region accumulates on the surface that is comprised of aluminum and silicon. As a result, the entire contact is actually governed by the size of an inner crater region plus this outer rim material, which is in contrast to results reported in the literature for nanosecond pulse durations. These results are in good agreement with independent results reported in the literature for LFCs processed on wafers with substantially different base resistivity and using significantly different processing parameters.
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U2 - 10.1117/12.2023978
DO - 10.1117/12.2023978
M3 - Conference contribution
AN - SCOPUS:84886702711
SN - 9780819496768
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Laser Material Processing for Solar Energy Devices II
T2 - Laser Material Processing for Solar Energy Devices II
Y2 - 28 August 2013 through 29 August 2013
ER -