TY - GEN
T1 - Role or UV/chlorine exposure during dry surface conditioning before integrated Epi deposition process
AU - Ruzyllo, J.
AU - Rohr, E.
AU - Caymax, M.
AU - Baeyens, M.
AU - Conard, T.
AU - Mertens, P.
AU - Heyns, M.
N1 - Publisher Copyright:
© (1999) Trans Tech Publications, Switzerland.
PY - 1999
Y1 - 1999
N2 - Native/chemical oxide etching using the anhydrous HF (AHF)/methano! process before epitaxial deposition was investigated in a cluster incorporating surface processing module and epi deposition reactor. The results of this research indicate that the AHF/methanol process alone leaves the Si surface in a state which does not allow growth of the haze-free epitaxial layer at 800 °C. If the surface is exposed to chlorine ambient following oxide etch, however, haze is eliminated and a high quality epi layer is grown. This effect is attributed primarily to the reduction of fluorine remaining on the surface following AHF/methanol oxide etch by chlorine. The proposed pre-epi surface preparation procedure, which does not involve any elevated temperature step, shows excellent promise for low-temperature fully integrated epitaxial processes.
AB - Native/chemical oxide etching using the anhydrous HF (AHF)/methano! process before epitaxial deposition was investigated in a cluster incorporating surface processing module and epi deposition reactor. The results of this research indicate that the AHF/methanol process alone leaves the Si surface in a state which does not allow growth of the haze-free epitaxial layer at 800 °C. If the surface is exposed to chlorine ambient following oxide etch, however, haze is eliminated and a high quality epi layer is grown. This effect is attributed primarily to the reduction of fluorine remaining on the surface following AHF/methanol oxide etch by chlorine. The proposed pre-epi surface preparation procedure, which does not involve any elevated temperature step, shows excellent promise for low-temperature fully integrated epitaxial processes.
UR - http://www.scopus.com/inward/record.url?scp=0032761727&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032761727&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/SSP.65-66.233
DO - 10.4028/www.scientific.net/SSP.65-66.233
M3 - Conference contribution
AN - SCOPUS:0032761727
SN - 9783908450405
T3 - Solid State Phenomena
SP - 233
EP - 236
BT - Ultra Clean Processing of Silicon Surfaces
A2 - Heyns, Marc
A2 - Meuris, Marc
A2 - Mertens, Paul
PB - Trans Tech Publications Ltd
T2 - 4th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 1998
Y2 - 21 September 1998 through 23 September 1998
ER -