Room-temperature epitaxy of metal thin films on tungsten diselenide

Chemical Compounds

• Diselenide 87%
• Epitaxial Growth 86%
• Tungsten 65%
• Ambient Reaction Temperature 39%
• Metal 32%
• Transition Element 22%
• Diffusion Barrier 19%
• Face-Centered Cubic Crystal System 16%
• Elemental Tungsten 15%
• Physical Vapour Deposition 10%
• Surface Diffusion 9%
• Selected Area Electron Diffraction 9%
• Selenide 9%
• Phase Equilibria 7%
• Metal Atom 7%
• Annealing 6%
• Transmission Electron Microscopy 5%
• Surface 5%
• Density Functional Theory 4%
• Thermodynamics 4%

Engineering & Materials Science

• Epitaxial growth 100%
• Tungsten 76%
• Thin films 67%
• Metals 45%
• Transition metals 34%
• Temperature 28%
• Diffusion barriers 17%
• Lattice mismatch 10%
• Surface diffusion 9%
• Density functional theory 8%
• Electron diffraction 7%
• Physical vapor deposition 7%
• Phase equilibria 7%
• Atoms 6%
• Transmission electron microscopy 6%
• Annealing 5%
• Thermodynamics 5%
• Aluminum 4%

Physics & Astronomy

• epitaxy 70%
• tungsten 60%
• room temperature 39%
• thin films 36%
• metals 36%
• transition metals 19%
• aluminides 8%
• selenides 7%
• symmetry 6%
• surface diffusion 6%
• reactivity 5%
• metal surfaces 5%
• electron diffraction 5%
• density functional theory 4%
• vapor deposition 4%
• aluminum 4%
• thermodynamics 4%
• annealing 3%
• atoms 2%