Room temperature mid-infrared surface-emitting photonic crystal laser on silicon

Binbin Weng; Jiangang Ma; Lai Wei; Lin Li; Jijun Qiu; Jian Xu; Zhisheng Shi

doi:10.1063/1.3665402

Room temperature mid-infrared surface-emitting photonic crystal laser on silicon

Binbin Weng, Jiangang Ma, Lai Wei, Lin Li, Jijun Qiu, Jian Xu, Zhisheng Shi

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We demonstrate a mid-infrared surface-emitting photonic crystal laser on silicon substrate operating at room temperature. The active region consisting of PbSe/PbSrSe multiple quantum wells was grown by molecular beam epitaxy on Si(111) substrate patterned with a photonic crystal (PC) array. The PC array forms a transverse magnetic polarized photonic bandgap at around 2840 cm ^-1. Under pulsed optical pumping, room temperature multimode lasing emissions were observed at wavelength ∼3.5 m with estimated threshold peak pumping intensity of 24 kW/cm². Angular-dependent measurement indicates the lasing is of a Gaussian-like profile with full width at half maximum of 4.66.

Original language	English (US)
Article number	221110
Journal	Applied Physics Letters
Volume	99
Issue number	22
DOIs	https://doi.org/10.1063/1.3665402
State	Published - Nov 28 2011

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3665402

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title = "Room temperature mid-infrared surface-emitting photonic crystal laser on silicon",

abstract = "We demonstrate a mid-infrared surface-emitting photonic crystal laser on silicon substrate operating at room temperature. The active region consisting of PbSe/PbSrSe multiple quantum wells was grown by molecular beam epitaxy on Si(111) substrate patterned with a photonic crystal (PC) array. The PC array forms a transverse magnetic polarized photonic bandgap at around 2840 cm -1. Under pulsed optical pumping, room temperature multimode lasing emissions were observed at wavelength ∼3.5 m with estimated threshold peak pumping intensity of 24 kW/cm2. Angular-dependent measurement indicates the lasing is of a Gaussian-like profile with full width at half maximum of 4.66.",

author = "Binbin Weng and Jiangang Ma and Lai Wei and Lin Li and Jijun Qiu and Jian Xu and Zhisheng Shi",

note = "Funding Information: Funding was partially provided by the DoD ARO under Grant No. W911NF-07-1-0587, NSF Grant No. DMR-0520550, and by Oklahoma OCAST program under Grant Nos. AR112-18 and AR082-052. ",

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doi = "10.1063/1.3665402",

language = "English (US)",

volume = "99",

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TY - JOUR

T1 - Room temperature mid-infrared surface-emitting photonic crystal laser on silicon

AU - Weng, Binbin

AU - Ma, Jiangang

AU - Wei, Lai

AU - Li, Lin

AU - Qiu, Jijun

AU - Xu, Jian

AU - Shi, Zhisheng

N1 - Funding Information: Funding was partially provided by the DoD ARO under Grant No. W911NF-07-1-0587, NSF Grant No. DMR-0520550, and by Oklahoma OCAST program under Grant Nos. AR112-18 and AR082-052.

PY - 2011/11/28

Y1 - 2011/11/28

N2 - We demonstrate a mid-infrared surface-emitting photonic crystal laser on silicon substrate operating at room temperature. The active region consisting of PbSe/PbSrSe multiple quantum wells was grown by molecular beam epitaxy on Si(111) substrate patterned with a photonic crystal (PC) array. The PC array forms a transverse magnetic polarized photonic bandgap at around 2840 cm -1. Under pulsed optical pumping, room temperature multimode lasing emissions were observed at wavelength ∼3.5 m with estimated threshold peak pumping intensity of 24 kW/cm2. Angular-dependent measurement indicates the lasing is of a Gaussian-like profile with full width at half maximum of 4.66.

AB - We demonstrate a mid-infrared surface-emitting photonic crystal laser on silicon substrate operating at room temperature. The active region consisting of PbSe/PbSrSe multiple quantum wells was grown by molecular beam epitaxy on Si(111) substrate patterned with a photonic crystal (PC) array. The PC array forms a transverse magnetic polarized photonic bandgap at around 2840 cm -1. Under pulsed optical pumping, room temperature multimode lasing emissions were observed at wavelength ∼3.5 m with estimated threshold peak pumping intensity of 24 kW/cm2. Angular-dependent measurement indicates the lasing is of a Gaussian-like profile with full width at half maximum of 4.66.

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ER -

Room temperature mid-infrared surface-emitting photonic crystal laser on silicon

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