Abstract
Exposing thin films of amorphous SiO2 to molecular hydrogen at room temperature converts some silicon dangling bond defects, E' centers, into two hydrogen coupled complexes. We argue that these reactions may play important roles in radiation and hot carrier instabilities in metal/oxide/silicon devices.
Original language | English (US) |
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Pages (from-to) | 2186-2191 |
Number of pages | 6 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 39 |
Issue number | 6 |
DOIs | |
State | Published - Dec 1992 |
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering