Abstract
Exposing thin films of amorphous SiO2 to molecular hydrogen at room temperature converts some silicon dangling bond defects, E' centers, into two hydrogen coupled complexes. These reactions may play important roles in radiation and hot carrier instabilities in metal/oxide/silicon devices.
Original language | English (US) |
---|---|
Pages (from-to) | 40-42 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 62 |
Issue number | 1 |
DOIs | |
State | Published - 1993 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)