Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon

J. F. Conley; P. M. Lenahan

doi:10.1063/1.108812

Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO₂ thin films on silicon

J. F. Conley, P. M. Lenahan

Research output: Contribution to journal › Article › peer-review

87 Scopus citations

Abstract

Exposing thin films of amorphous SiO₂ to molecular hydrogen at room temperature converts some silicon dangling bond defects, E' centers, into two hydrogen coupled complexes. These reactions may play important roles in radiation and hot carrier instabilities in metal/oxide/silicon devices.

Original language	English (US)
Pages (from-to)	40-42
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	1
DOIs	https://doi.org/10.1063/1.108812
State	Published - 1993

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.108812

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title = "Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon",

abstract = "Exposing thin films of amorphous SiO2 to molecular hydrogen at room temperature converts some silicon dangling bond defects, E' centers, into two hydrogen coupled complexes. These reactions may play important roles in radiation and hot carrier instabilities in metal/oxide/silicon devices.",

author = "Conley, {J. F.} and Lenahan, {P. M.}",

year = "1993",

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Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO₂ thin films on silicon

Abstract

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