Roughness and phase evolution in Si1-xGex:H: Guidance for multijunction photovoltaics

N. J. Podraza; C. R. Wronski; M. W. Horn; R. W. Collins

doi:10.1109/WCPEC.2006.279807

Roughness and phase evolution in Si_1-xGe_x:H: Guidance for multijunction photovoltaics

N. J. Podraza
, C. R. Wronski
, M. W. Horn
, R. W. Collins

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

In this study, the amorphous-phase roughening transition thickness has been determined as a function of process variables in plasma-enhanced chemical vapor deposition (PECVD) of hydrogenated amorphous silicongermanium alloys (a-Si _1-xGe_x:H). The process variables include the H ₂-dilution gas flow ratio, the alloying flow ratio, the electrode configuration, and the He-dilution ratio. One clear feature of this study is a maximum in the amorphous roughening transition thickness (and hence surface stability) at a H₂-dilution ratio just below the transition from amorphous to mixed-phase (amorphous +microcrystalline) growth. A second feature for high Ge content films is a significant increase in the roughening transition thickness for cathode PECVD (with a self-bias of ∼ -20 V). Additional features of interest involve suppression of the mixed-phase transition for (i) alloying with Ge, (ii) biasing the substrate cathodically, and (iii) diluting the gas with He.

Original language	English (US)
Title of host publication	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Publisher	IEEE Computer Society
Pages	1657-1660
Number of pages	4
ISBN (Print)	1424400163, 9781424400164
DOIs	https://doi.org/10.1109/WCPEC.2006.279807
State	Published - Jan 1 2006
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: May 7 2006 → May 12 2006

Publication series

Name	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume	2

Other

Other	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/Territory	United States
City	Waikoloa, HI
Period	5/7/06 → 5/12/06

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

Access to Document

10.1109/WCPEC.2006.279807

Cite this

Podraza, N. J., Wronski, C. R., Horn, M. W., & Collins, R. W. (2006). Roughness and phase evolution in Si_1-xGe_x:H: Guidance for multijunction photovoltaics. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 1657-1660). Article 4059973 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 2). IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279807

Podraza, N. J. ; Wronski, C. R. ; Horn, M. W. et al. / Roughness and phase evolution in Si_1-xGe_x:H : Guidance for multijunction photovoltaics. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. pp. 1657-1660 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).

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title = "Roughness and phase evolution in Si1-xGex:H: Guidance for multijunction photovoltaics",

abstract = "In this study, the amorphous-phase roughening transition thickness has been determined as a function of process variables in plasma-enhanced chemical vapor deposition (PECVD) of hydrogenated amorphous silicongermanium alloys (a-Si 1-xGex:H). The process variables include the H 2-dilution gas flow ratio, the alloying flow ratio, the electrode configuration, and the He-dilution ratio. One clear feature of this study is a maximum in the amorphous roughening transition thickness (and hence surface stability) at a H2-dilution ratio just below the transition from amorphous to mixed-phase (amorphous +microcrystalline) growth. A second feature for high Ge content films is a significant increase in the roughening transition thickness for cathode PECVD (with a self-bias of ∼ -20 V). Additional features of interest involve suppression of the mixed-phase transition for (i) alloying with Ge, (ii) biasing the substrate cathodically, and (iii) diluting the gas with He.",

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Podraza, NJ, Wronski, CR, Horn, MW & Collins, RW 2006, Roughness and phase evolution in Si_1-xGe_x:H: Guidance for multijunction photovoltaics. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4059973, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, vol. 2, IEEE Computer Society, pp. 1657-1660, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 5/7/06. https://doi.org/10.1109/WCPEC.2006.279807

Roughness and phase evolution in Si_1-xGe_x:H: Guidance for multijunction photovoltaics. / Podraza, N. J.; Wronski, C. R.; Horn, M. W. et al.
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. p. 1657-1660 4059973 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - In this study, the amorphous-phase roughening transition thickness has been determined as a function of process variables in plasma-enhanced chemical vapor deposition (PECVD) of hydrogenated amorphous silicongermanium alloys (a-Si 1-xGex:H). The process variables include the H 2-dilution gas flow ratio, the alloying flow ratio, the electrode configuration, and the He-dilution ratio. One clear feature of this study is a maximum in the amorphous roughening transition thickness (and hence surface stability) at a H2-dilution ratio just below the transition from amorphous to mixed-phase (amorphous +microcrystalline) growth. A second feature for high Ge content films is a significant increase in the roughening transition thickness for cathode PECVD (with a self-bias of ∼ -20 V). Additional features of interest involve suppression of the mixed-phase transition for (i) alloying with Ge, (ii) biasing the substrate cathodically, and (iii) diluting the gas with He.

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Podraza NJ, Wronski CR, Horn MW, Collins RW. Roughness and phase evolution in Si_1-xGe_x:H: Guidance for multijunction photovoltaics. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society. 2006. p. 1657-1660. 4059973. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). doi: 10.1109/WCPEC.2006.279807