Schottky barrier engineering in III-V nitrides via the piezoelectric effect

E. T. Yu; X. Z. Dang; L. S. Yu; D. Qiao; P. M. Asbeck; S. S. Lau; G. J. Sullivan; K. S. Boutros; J. M. Redwing

doi:10.1063/1.122312

Schottky barrier engineering in III-V nitrides via the piezoelectric effect

E. T. Yu, X. Z. Dang, L. S. Yu, D. Qiao, P. M. Asbeck, S. S. Lau, G. J. Sullivan, K. S. Boutros, J. M. Redwing

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136 Scopus citations

Abstract

A method for enhancing effective Schottky barrier heights in III-V nitride heterostructures based on the piezoelectric effect is proposed, demonstrated, and analyzed. Two-layer GaN/Al_xGa_1-xN barriers within heterostructure field-effect transistor epitaxial layer structures are shown to possess significantly larger effective barrier heights than those for Al_xGa_1-xN, and the influence of composition, doping, and layer thicknesses is assessed. A GaN/Al_0.25Ga_0.75N barrier structure optimized for heterojunction field-effect transistors is shown to yield a barrier height enhancement of 0.37 V over that for Al_0.25Ga_0.75N. Corresponding reductions in forward-bias current and reverse-bias leakage are observed in current-voltage measurements performed on Schottky diodes.

Original language	English (US)
Pages (from-to)	1880-1882
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	13
DOIs	https://doi.org/10.1063/1.122312
State	Published - 1998

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.122312

Cite this

@article{caabeb5f796f4a9cbcd0aeb99555653f,

title = "Schottky barrier engineering in III-V nitrides via the piezoelectric effect",

abstract = "A method for enhancing effective Schottky barrier heights in III-V nitride heterostructures based on the piezoelectric effect is proposed, demonstrated, and analyzed. Two-layer GaN/AlxGa1-xN barriers within heterostructure field-effect transistor epitaxial layer structures are shown to possess significantly larger effective barrier heights than those for AlxGa1-xN, and the influence of composition, doping, and layer thicknesses is assessed. A GaN/Al0.25Ga0.75N barrier structure optimized for heterojunction field-effect transistors is shown to yield a barrier height enhancement of 0.37 V over that for Al0.25Ga0.75N. Corresponding reductions in forward-bias current and reverse-bias leakage are observed in current-voltage measurements performed on Schottky diodes.",

author = "Yu, {E. T.} and Dang, {X. Z.} and Yu, {L. S.} and D. Qiao and Asbeck, {P. M.} and Lau, {S. S.} and Sullivan, {G. J.} and Boutros, {K. S.} and Redwing, {J. M.}",

year = "1998",

doi = "10.1063/1.122312",

language = "English (US)",

volume = "73",

pages = "1880--1882",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

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TY - JOUR

T1 - Schottky barrier engineering in III-V nitrides via the piezoelectric effect

AU - Yu, E. T.

AU - Dang, X. Z.

AU - Yu, L. S.

AU - Qiao, D.

AU - Asbeck, P. M.

AU - Lau, S. S.

AU - Sullivan, G. J.

AU - Boutros, K. S.

AU - Redwing, J. M.

PY - 1998

Y1 - 1998

N2 - A method for enhancing effective Schottky barrier heights in III-V nitride heterostructures based on the piezoelectric effect is proposed, demonstrated, and analyzed. Two-layer GaN/AlxGa1-xN barriers within heterostructure field-effect transistor epitaxial layer structures are shown to possess significantly larger effective barrier heights than those for AlxGa1-xN, and the influence of composition, doping, and layer thicknesses is assessed. A GaN/Al0.25Ga0.75N barrier structure optimized for heterojunction field-effect transistors is shown to yield a barrier height enhancement of 0.37 V over that for Al0.25Ga0.75N. Corresponding reductions in forward-bias current and reverse-bias leakage are observed in current-voltage measurements performed on Schottky diodes.

AB - A method for enhancing effective Schottky barrier heights in III-V nitride heterostructures based on the piezoelectric effect is proposed, demonstrated, and analyzed. Two-layer GaN/AlxGa1-xN barriers within heterostructure field-effect transistor epitaxial layer structures are shown to possess significantly larger effective barrier heights than those for AlxGa1-xN, and the influence of composition, doping, and layer thicknesses is assessed. A GaN/Al0.25Ga0.75N barrier structure optimized for heterojunction field-effect transistors is shown to yield a barrier height enhancement of 0.37 V over that for Al0.25Ga0.75N. Corresponding reductions in forward-bias current and reverse-bias leakage are observed in current-voltage measurements performed on Schottky diodes.

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DO - 10.1063/1.122312

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VL - 73

SP - 1880

EP - 1882

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Schottky barrier engineering in III-V nitrides via the piezoelectric effect

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