Schottky barrier engineering in III-V nitrides via the piezoelectric effect

E. T. Yu; X. Z. Dang; L. S. Yu; D. Qiao; P. M. Asbeck; S. S. Lau; G. J. Sullivan; K. S. Boutros; J. M. Redwing

doi:10.1063/1.122312

Schottky barrier engineering in III-V nitrides via the piezoelectric effect

E. T. Yu
, X. Z. Dang
, L. S. Yu
, D. Qiao
, P. M. Asbeck
, S. S. Lau
, G. J. Sullivan
, K. S. Boutros
, J. M. Redwing

Research output: Contribution to journal › Article › peer-review

141 Scopus citations

Abstract

A method for enhancing effective Schottky barrier heights in III-V nitride heterostructures based on the piezoelectric effect is proposed, demonstrated, and analyzed. Two-layer GaN/Al_xGa_1-xN barriers within heterostructure field-effect transistor epitaxial layer structures are shown to possess significantly larger effective barrier heights than those for Al_xGa_1-xN, and the influence of composition, doping, and layer thicknesses is assessed. A GaN/Al_0.25Ga_0.75N barrier structure optimized for heterojunction field-effect transistors is shown to yield a barrier height enhancement of 0.37 V over that for Al_0.25Ga_0.75N. Corresponding reductions in forward-bias current and reverse-bias leakage are observed in current-voltage measurements performed on Schottky diodes.

Original language	English (US)
Pages (from-to)	1880-1882
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	13
DOIs	https://doi.org/10.1063/1.122312
State	Published - 1998

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.122312

Cite this

@article{caabeb5f796f4a9cbcd0aeb99555653f,

title = "Schottky barrier engineering in III-V nitrides via the piezoelectric effect",

abstract = "A method for enhancing effective Schottky barrier heights in III-V nitride heterostructures based on the piezoelectric effect is proposed, demonstrated, and analyzed. Two-layer GaN/AlxGa1-xN barriers within heterostructure field-effect transistor epitaxial layer structures are shown to possess significantly larger effective barrier heights than those for AlxGa1-xN, and the influence of composition, doping, and layer thicknesses is assessed. A GaN/Al0.25Ga0.75N barrier structure optimized for heterojunction field-effect transistors is shown to yield a barrier height enhancement of 0.37 V over that for Al0.25Ga0.75N. Corresponding reductions in forward-bias current and reverse-bias leakage are observed in current-voltage measurements performed on Schottky diodes.",

author = "Yu, \{E. T.\} and Dang, \{X. Z.\} and Yu, \{L. S.\} and D. Qiao and Asbeck, \{P. M.\} and Lau, \{S. S.\} and Sullivan, \{G. J.\} and Boutros, \{K. S.\} and Redwing, \{J. M.\}",

year = "1998",

doi = "10.1063/1.122312",

language = "English (US)",

volume = "73",

pages = "1880--1882",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}

TY - JOUR

T1 - Schottky barrier engineering in III-V nitrides via the piezoelectric effect

AU - Yu, E. T.

AU - Dang, X. Z.

AU - Yu, L. S.

AU - Qiao, D.

AU - Asbeck, P. M.

AU - Lau, S. S.

AU - Sullivan, G. J.

AU - Boutros, K. S.

AU - Redwing, J. M.

PY - 1998

Y1 - 1998

N2 - A method for enhancing effective Schottky barrier heights in III-V nitride heterostructures based on the piezoelectric effect is proposed, demonstrated, and analyzed. Two-layer GaN/AlxGa1-xN barriers within heterostructure field-effect transistor epitaxial layer structures are shown to possess significantly larger effective barrier heights than those for AlxGa1-xN, and the influence of composition, doping, and layer thicknesses is assessed. A GaN/Al0.25Ga0.75N barrier structure optimized for heterojunction field-effect transistors is shown to yield a barrier height enhancement of 0.37 V over that for Al0.25Ga0.75N. Corresponding reductions in forward-bias current and reverse-bias leakage are observed in current-voltage measurements performed on Schottky diodes.

AB - A method for enhancing effective Schottky barrier heights in III-V nitride heterostructures based on the piezoelectric effect is proposed, demonstrated, and analyzed. Two-layer GaN/AlxGa1-xN barriers within heterostructure field-effect transistor epitaxial layer structures are shown to possess significantly larger effective barrier heights than those for AlxGa1-xN, and the influence of composition, doping, and layer thicknesses is assessed. A GaN/Al0.25Ga0.75N barrier structure optimized for heterojunction field-effect transistors is shown to yield a barrier height enhancement of 0.37 V over that for Al0.25Ga0.75N. Corresponding reductions in forward-bias current and reverse-bias leakage are observed in current-voltage measurements performed on Schottky diodes.

UR - https://www.scopus.com/pages/publications/0000542663

UR - https://www.scopus.com/pages/publications/0000542663#tab=citedBy

U2 - 10.1063/1.122312

DO - 10.1063/1.122312

M3 - Article

AN - SCOPUS:0000542663

SN - 0003-6951

VL - 73

SP - 1880

EP - 1882

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Schottky barrier engineering in III-V nitrides via the piezoelectric effect

Abstract

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