TY - JOUR
T1 - Searching for a promising topological Dirac nodal-line semimetal by angle resolved photoemission spectroscopy
AU - Cheng, Zhengwang
AU - Hu, Zhilong
AU - Li, Shaojian
AU - Ma, Xinguo
AU - Liu, Zhifeng
AU - Wang, Mei
AU - He, Jing
AU - Zou, Wei
AU - Li, Fangsen
AU - Mao, Zhiqiang
AU - Pan, Minghu
N1 - Publisher Copyright:
© 2021 The Author(s). Published by IOP Publishing Ltd on behalf of the Institute of Physics and Deutsche Physikalische Gesellschaft
PY - 2021/12
Y1 - 2021/12
N2 - Topological semimetals, in which conduction and valence bands cross each other at either discrete points or along a closed loop with symmetry protected in the momentum space, exhibited great potential in applications of optical devices as well as heterogeneous catalysts or antiferromagnetic spintronics, especially when the crossing points/lines matches Fermi level (E F). It is intriguing to find the ‘ideal’ topological semimetal material, in which has a band structure with Dirac band-crossing located at E F without intersected by other extraneous bands. Here, by using angle resolved photoemission spectroscopy, we investigate the band structure of the so-called ‘square-net’ topological material ZrGeS. The Brillouin zone (BZ) mapping shows the Fermi surface of ZrGeS is composed by a diamond-shaped nodal line loop at the center of BZ and small electron-like Fermi pockets around X point. The Dirac nodal line band-crossing located right at E F, and shows clearly the linear Dirac band dispersions within a large energy range >1.5Â eV below E F, without intersected with other bands. The obtained Fermi velocities and effective masses along Γ–X, Γ–M and M–X high symmetry directions were 4.5–5.9Â eV Ã and 0–0.50 m e, revealing an anisotropic electronic property. Our results suggest that ZrGeS, as a promising topological nodal line semimetal, could provide a promising platform to investigate the Dirac-fermions related physics and the applications of topological devising.
AB - Topological semimetals, in which conduction and valence bands cross each other at either discrete points or along a closed loop with symmetry protected in the momentum space, exhibited great potential in applications of optical devices as well as heterogeneous catalysts or antiferromagnetic spintronics, especially when the crossing points/lines matches Fermi level (E F). It is intriguing to find the ‘ideal’ topological semimetal material, in which has a band structure with Dirac band-crossing located at E F without intersected by other extraneous bands. Here, by using angle resolved photoemission spectroscopy, we investigate the band structure of the so-called ‘square-net’ topological material ZrGeS. The Brillouin zone (BZ) mapping shows the Fermi surface of ZrGeS is composed by a diamond-shaped nodal line loop at the center of BZ and small electron-like Fermi pockets around X point. The Dirac nodal line band-crossing located right at E F, and shows clearly the linear Dirac band dispersions within a large energy range >1.5Â eV below E F, without intersected with other bands. The obtained Fermi velocities and effective masses along Γ–X, Γ–M and M–X high symmetry directions were 4.5–5.9Â eV Ã and 0–0.50 m e, revealing an anisotropic electronic property. Our results suggest that ZrGeS, as a promising topological nodal line semimetal, could provide a promising platform to investigate the Dirac-fermions related physics and the applications of topological devising.
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U2 - 10.1088/1367-2630/ac3d51
DO - 10.1088/1367-2630/ac3d51
M3 - Article
AN - SCOPUS:85122531138
SN - 1367-2630
VL - 23
JO - New Journal of Physics
JF - New Journal of Physics
IS - 12
M1 - 123026
ER -